Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR50U080 thru SDR50U120
Series
50 AMP
Ultra Fast Recovery
Rectifier
800 -1200 Volts
50 nsec
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SDR50U
__
│
│
│
│
│
│
│
│
└
__
│
│
│
│
└
__
└
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Features:
•
•
•
•
•
•
•
•
•
•
Ultra Fast Recovery: 45 nsec typical
High Surge Rating
Low Reverse Leakage Current
Low Forward Voltage Drop
Low Junction Capacitance
Hermetically Sealed Package
Gold Eutectic Die Attach available
Ultrasonic Aluminum Wire Bonds
Ceramic Seals for improved hermeticity available
TX, TXV, Space Level Screening Available Consult
2/
Factory.
Package Type
M = TO-254
N = TO-258
P = TO-259
Voltage/Family
080 = 800V
090 = 900V
100 = 1000V
110 = 1100V
120 = 1200V
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SDR50U080
SDR50U090
SDR50U100
SDR50U110
SDR50U120
Symbol
V
RRM
V
RWM
V
R
Io
Value
800
900
1000
1100
1200
50
Units
Volts
Average Rectified Forward Current
Peak Surge Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25ºC)
3/
(8.3 ms Pulse, Half Sine Wave, Allow Junction to Reach Equilibrium
3/
Between Pulses, T
A
= 25ºC)
Amps
I
FSM
Top & Tstg
R
θJE
500
-65 to +200
1.0
Amps
ºC
ºC/W
TO-259 (P)
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to End Tab
3/
TO-254 (M)
1/ For ordering information, price, operating curves, and
availability - Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows
available on request.
3/ Pins 2 & 3 connected.
TO-258 (N)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0117E
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR50U080 thru SDR50U120
Series
Electrical Characteristics
Instantaneous Forward Voltage Drop
(T
A
= 25ºC, 300
μsec
pulse)
Instantaneous Forward Voltage Drop
I
F
= 20Adc
I
F
= 50Adc
I
F
= 100Adc
T
A
= -55ºC
I
F
= 20Adc
T
A
= -55ºC
I
F
= 50Adc
T
A
= 100ºC
I
F
= 20Adc
T
A
= 100ºC
I
F
= 50Adc
Symbol
V
F1
Typ
1.60
1.75
1.90
1.65
1.80
1.30
1.55
50
2.50
8.0
23
95
90
45
110
55
4.0
140
7.0
Max
--
1.9
2.3
--
1.95
--
1.7
100
10
--
--
--
150
50
--
--
--
--
--
Units
Volts
V
F2
I
R1
Volts
μA
Reverse Leakage Current
(Rated V
R
, T
A
= 25ºC, 300
μsec
pulse minimum)
Reverse Leakage Current
(Rated V
R
, T
A
= 100ºC, 300
μsec
pulse minimum)
(Rated V
R
, T
A
= 125ºC, 300
μsec
pulse minimum)
(Rated V
R
, T
A
= 150ºC, 300
μsec
pulse minimum)
Junction Capacitance
(V
R
= 5 Vdc, T
A
= 25ºC, f = 1MHz)
(V
R
= 10 Vdc, T
A
= 25ºC, f = 1MHz)
Reverse Recovery Time
(I
F
= 500 mA, I
R
= 1A, I
RR
= 0.25A)
(I
F
= 500 mA, I
R
= 1A, I
RR
= 0.25A)
(I
F
= 10 A, dI
F
/dt = 100A/us)
(I
F
= 10 A, dI
F
/dt = 100A/us)
(I
F
= 10 A, dI
F
/dt = 100A/us)
(I
F
= 10 A, dI
F
/dt = 100A/us)
I
R2
mA
C
J
T
A
= 25ºC
T
A
= 100ºC
T
A
= 25ºC
T
A
= 25ºC
T
A
= 100ºC
T
A
= 100ºC
t
rr1
t
rr2
t
rr3
I
RM3
t
rr4
I
RM4
pF
nsec
nsec
nsec
A
nsec
A
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0117E
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR50U080 thru SDR50U120
Series
Case Outline: TO-254
Pin1: Cathode
Pin2: Anode
Pin3: Anode
Case Outline: TO-258
Pin1: Cathode
Pin2: Anode
Pin3: Anode
Case Outline: TO-259
Pin1: Cathode
Pin2: Anode
Pin3: Anode
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0117E
DOC
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
