Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com *
www.ssdi-power.com
SFT6800S.5
2 A /500 Volts
NPN switching Transistor
Features:
•
Switching Transistor
•
Small Footprint Surface Mount Device with Excellent
Thermal Properties
•
TX, TXV, S-Level Screening Available
•
PNP Complimentary Parts Available (SFT1192
Series)
DESIGNER’S DATA SHEET
SMD.5
Maximum Ratings
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continuous Collector Current
Power Dissipation @ T
C
= 25ºC
Power Dissipation @ T
A
= 25ºC
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case and to Ambient
Note1:
Derated 333 mW/°C above T
C
= 105°C
Note2:
Derated 13.33 mW/°C above T
A
= 75°C
note 1
note 2
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
Top & Tstg
R
θJC
R
θJA
Value
400
500
10
2
15
1
-65 to +200
3 (typ 2)
75
Units
Volts
Volts
Volts
Amps
W
ºC
ºC/W
PIN 1= COLLECTOR; PIN 2= EMITTER; PIN 3= BASE
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0088B
Doc
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com *
www.ssdi-power.com
SFT6800S.5
Symbol
I
C
= 20 mA
I
C
= 100 uA
I
E
= 20 uA
V
CB
= 400 V
V
CE
= 450 V, V
BE
= 1.5 V
V
EB
= 6.0 V
V
CE
= 5 V, I
C
= 50 mA
V
CE
= 5 V, I
C
= 500 mA
V
CE
= 5 V, I
C
= 1 A
I
C
= 500 mA, I
B
= 50 mA
I
C
= 500 mA, I
B
= 50 mA
V
CE
=10V, I
C
=50mA, f= 20
MHz
V
CB
= 30V, f = 1…2 MHz
V
CC
= 330V, I
C
= 500 mA,
I
B1
=I
B2
= 100 mA;
R
B1
=R
B2
= 330
Ω
V
CC
= 330V, I
C
= 500 mA,
I
B1
=I
B2
= 100 mA
(R
B1
=R
B2
= 100
Ω,
PW= 2μs)
Electrical Characteristic
4/
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Forward Current Transfer Ratio
*
Min
400
500
10
––
––
––
35
40
15
––
––
25
––
––
Typ
––
800
11.5
0.05
0.01
0.01
85
95
50
0.25
0.8
35
30
115
Max
––
––
––
0.2
0.2
0.2
––
––
––
0.5
1.0
––
40
700
Units
Volts
Volts
Volts
μA
μA
μA
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
CEV
I
EBO
H
FE1
H
FE2
H
FE4
V
CE(sat)1
V
BE(sat)1
f
T
C
obo
t
on
Collector to Emitter Saturation Voltage
Base to Emitter
Saturation Voltage
Frequency Transition (Small Signal
Current Gain) @ f= 20 MHz
Output Capacitance
Turn-On Time
Volts
Volts
MHz
pF
ns
Turn-Off Time
t
off
––
1700
2000
ns
NOTES:
* Pulse Test: Pulse Width = 300μsec, Duty Cycle = 2%
1/ For Ordering Information, Price, Availability Contact Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0088B
Doc
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