HiPerFET
TM
Power MOSFET
Q2-Class
(Electrically Isolated Back Surface)
IXFR38N80Q2
V
DSS
I
D25
R
DS(on)
t
rr
=
=
≤
≤
800V
28A
240mΩ
Ω
250ns
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
V
ISOL
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
800
800
±
30
±
40
28
150
38
4
20
500
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
V~
N/lb.
g
Features
• Double metal process for low gate
resistance
• Silicon chip on DCB substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Epoxy meet UL 94 V-0, flammability
classification
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
G = Gate
S = Source
D = Drain
Isolated Tab
ISOPLUS247 (IXFR)
E153432
Maximum lead temperature for soldering
Plastic body for 10s
50/60 Hz, RMS, 1 minute
Mounting force
300
260
2500
20..120/4.5..27
5
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
30V, V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
V
GS
= 10V, I
D
= 19A, Note 1
T
J
= 125°C
Characteristic Values
Min.
Typ. Max.
800
3.0
5.5
±
200
V
V
nA
• Easy assembly
• Space savings
• High power density
25
μA
2 mA
240 mΩ
© 2008 IXYS CORPORATION, All rights reserved
DS99203A(05/08)
IXFR38N80Q2
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.15
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 19A
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 19A, Note 1
Characteristic Values
Min.
Typ.
Max.
25
37
9500
888
185
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.25
°C/W
°C/W
ISOPLUS247 (IXFR) Outline
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 19A
R
G
= 1Ω (External)
20
16
60
12
190
44
88
Source-Drain Diode
T
J
= 25°C unless otherwise specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 25A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
Characteristic Values
Min.
Typ.
Max.
38
150
1.5
A
A
V
250 ns
1
10
μC
A
Note 1: Pulse test, t
≤
300μs; duty cycle, d
≤
2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFR38N80Q2
Fig. 1. Output Characteristics
@ 25
º
C
40
35
30
V
GS
= 10V
90
80
70
V
GS
= 10V
7V
Fig. 2. Extended Output Characteristics
@ 25
º
C
I
D
- Amperes
I
D
- Amperes
25
20
15
10
5
0
0
1
2
3
4
5
6
6V
60
50
40
30
20
5.5V
6V
5.5V
5V
10
0
5V
7
8
9
10
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
Fig. 3. Output Characteristics
@ 125
º
C
40
35
30
V
GS
= 10V
6V
3.2
2.8
V
GS
= 10V
V
D S
- Volts
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value
vs. Junction Temperature
R
D S ( o n )
- Normalized
I
D
- Amperes
5.5V
25
20
5V
15
10
5
0
0
2
4
6
8
10
12
14
16
18
20
2.4
2.0
1.6
1.2
0.8
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 38A
I
D
= 19A
V
D S
- Volts
Fig. 5. R
DS(on)
Normalized to 0.5 I
D25
Value
vs. I
D
2.8
2.6
V
GS
= 10V
30
27
T
J
- Degrees Centigrade
Fig. 6. Drain Current vs. Case
Temperature
R
D S ( o n )
- Normalized
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
T
J
= 125ºC
24
21
I
D
- Amperes
T
J
= 25ºC
10
20
30
40
D
18
15
12
9
6
3
0
50
60
70
80
90
-50
-25
0
25
50
75
100
125
150
I
- Amperes
T
C
- Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXFR38N80Q2
Fig. 7. Input Admittance
60
55
50
45
40
35
30
25
20
15
10
5
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
0
10
20
30
40
50
60
70
T
J
= 125ºC
25ºC
- 40ºC
80
70
60
T
J
= - 40ºC
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
50
40
30
20
10
25ºC
125ºC
V
G S
- Volts
Fig. 9. Source Current vs.Source-To-Drain
Voltage
120
110
100
90
10
9
8
7
V
DS
= 400V
I
D
= 19A
I
G
= 10m A
I
D
- Amperes
Fig. 10. Gate Charge
I
S
- Amperes
V
G S
- Volts
T
J
= 125ºC
T
J
= 25ºC
80
70
60
50
40
30
20
10
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
6
5
4
3
2
1
0
0
20
40
60
80
100 120 140 160 180 200
V
S D
- Volts
Q
G
- nanoCoulombs
Fig. 11. Capacitance
100,000
f = 1MHz
1.000
Fig. 12. M aximum Transie nt The rmal
Impe dance
Capacitance - picoFarads
Z
( t h ) J C
- ºC / W
30
35
40
C
iss
10,000
0.100
C
oss
1,000
C
rss
100
0
5
10
15
20
25
0.010
0.001
0.0001
0.001
0.01
0.1
1
10
V
D S
- Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_38N80Q2(94)5-28-08-A
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