A Product Line of
Diodes Incorporated
ZXTC2045E6
30V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26
Features
•
•
NPN + PNP Combination
BV
CEO
> 30 (-30)V
BV
CEV
> 40 (-40)V
I
CM
= 5 (-5)A Peak Pulse Current
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
•
•
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads; Solderable per
MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
ADVANCE INFORMATION
•
•
•
•
•
•
Description
Advanced process capability is used to achieve this high performance
device. Combining NPN and PNP transistors, the SOT26 package
provides a compact solution for the intended applications.
Applications
•
•
MOSFET and IGBT Gate Driving
Motor Drive
SOT26
C1
C2
C1
B1
Q1
Top View
E1
B2
E2
Top View
Pin-Out
B2
Q2
B1
C2
E1
E2
Device Symbol
Ordering Information
(Notes 4 & 5)
Product
ZXTC2045E6TA
ZXTC2045E6QTA
Notes:
Compliance
AEC-Q101
Automotive
Marking
2045
2045
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/ for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
Marking Information
SOT26
2045
2045 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2015
Code
C
Month
Code
Jan
1
2016
D
Feb
2
2017
E
Mar
3
2018
F
Apr
4
YM
2019
G
May
5
2020
H
Jun
6
2021
I
Jul
7
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
March 2015
ZXTC2045E6
Document Number: DS33645 Rev: 3 - 2
1 of 6
www.diodes.com
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC2045E6
Absolute Maximum Ratings – Q1 (NPN Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulsed Collector Current
Base Current
Symbol
V
CBO
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
Value
40
40
30
7
1.5
5
1
Unit
V
V
V
V
A
A
A
ADVANCE INFORMATION
Absolute Maximum Ratings – Q2 (PNP Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulsed Collector Current
Base Current
Symbol
V
CBO
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
Value
-40
-40
-30
-7
-1.5
-5
-1
Unit
V
V
V
V
A
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
(Notes 6 & 10)
(Notes 7 & 10)
Power Dissipation
Linear Derating Factor
(Notes 7 & 11)
(Notes 8 & 10)
(Notes 9 & 10)
(Notes 6 & 10)
(Notes 7 & 10)
(Notes 7 & 11)
(Notes 8 & 10)
(Notes 9 & 10)
(Note 12)
P
D
Symbol
Value
0.7
5.6
0.9
7.2
1.1
8.8
1.1
8.8
1.7
13.6
179
139
113
113
73
95.50
-55 to +150
Unit
W
mW/°
C
Thermal Resistance, Junction to Ambient
R
θ
JA
°
C/W
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
R
θ
JL
T
J
, T
STG
°
C
ESD Ratings
(Note 13)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
6. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Same as Note 6, except the device is surface mounted on 25mm x 25mm 1oz copper.
8. Same as Note 6, except the device is surface mounted on 50mm x 50mm 2oz copper.
9. Same as Note 8, except the device is measured at t < 5 seconds.
10. For device with one active die, both collectors attached to a common heatsink.
11. For device with two active die running at equal power, split heatsink 50% to each collector.
12. Thermal resistance from junction to solder-point (at the end of the collector lead).
13. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTC2045E6
Document Number: DS33645 Rev: 3 - 2
2 of 6
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC2045E6
Thermal Characteristics and Derating Information
ADVANCE INFORMATION
ZXTC2045E6
Document Number: DS33645 Rev: 3 - 2
3 of 6
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC2045E6
Electrical Characteristics – Q1 (NPN Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 14)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS
(Note 14)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
Symbol
BV
CBO
BV
CEV
BV
CEO
BV
EBO
I
CBO
I
CES/R
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
C
obo
f
T
t
d
t
r
t
s
t
f
Min
40
40
30
7
180
Typ
-
-
-
8.3
<1
<1
<1
300
9
265
10
12
185
45
Max
20
20
20
500
375
1,200
20
Unit
V
V
V
V
nA
nA
nA
mV
mV
pF
MHz
ns
ns
ns
ns
Test Condition
I
C
= 100µA, I
E
= 0
I
C
= 1µA, 0.25V > V
BE
> 1.0V
I
C
= 10mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CB
= 32V
V
CE
= 16V, R
≤
1k
V
EB
= 6V
I
C
= 100mA, V
CE
= 2V
I
C
= 750mA, I
B
= 15mA
I
C
= 750mA, I
B
= 15mA
V
CB
= 10V, f = 1.0MHz
V
CE
= 10V, I
C
= 50mA, f = 100MHz
V
CC
= 10V, I
C
= 1A
I
B1
= -I
B2
= 50mA
ADVANCE INFORMATION
Electrical Characteristics – Q2 (PNP Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 14)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS
(Note 14)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
Note:
Symbol
BV
CBO
BV
CEV
BV
CEO
BV
EBO
I
CBO
I
CES/R
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
C
obo
f
T
t
d
t
r
t
s
t
f
Min
-40
-40
-30
-7
180
Typ
-
-
-
-8.3
<-1
<-1
<-1
300
9
195
16
11
220
31
Max
-20
-20
-20
500
-375
-1,200
20
Unit
V
V
V
V
nA
nA
nA
mV
mV
pF
MHz
ns
ns
ns
ns
Test Condition
I
C
= -100µA, I
E
= 0
I
C
= -1µA, 0.25V < V
BE
< 1.0V
I
C
= -10mA, I
B
= 0
I
E
= -100µA, I
C
= 0
V
CB
= -32V
V
CE
= -16V, R
≤
1k
V
EB
= -6V
I
C
= -100mA, V
CE
= -2V
I
C
= -750mA, I
B
= -15mA
I
C
= -750mA, I
B
= -15mA
V
CB
= -10V, f = 1.0MHz
V
CE
= -10V, I
C
= -50mA, f = 100MHz
V
CC
= -10V, I
C
= -1A
I
B1
= -I
B2
= -50mA
14. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%.
ZXTC2045E6
Document Number: DS33645 Rev: 3 - 2
4 of 6
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC2045E6
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
ADVANCE INFORMATION
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Dimensions Value (in mm)
C
2.40
C1
0.95
G
1.60
X
0.55
Y
0.80
Y1
3.20
ZXTC2045E6
Document Number: DS33645 Rev: 3 - 2
5 of 6
www.diodes.com
a
L
C
c
enalP gnitaeS
1A
1C
E
2A
X
1a
G 1Y
Y
1e
D
e
b
3A
1E
SOT26
Dim Min Max
Typ
A1
0.013 0.10
0.05
A2
1.00 1.30
1.10
A3
0.70 0.80
0.75
b
0.35 0.50
0.38
c
0.10 0.20
0.15
D
2.90 3.10
3.00
e
-
-
0.95
e1
-
-
1.90
E
2.70 3.00
2.80
E1
1.50 1.70
1.60
L
0.35 0.55
0.40
a
-
-
8°
a1
-
-
7°
All Dimensions in mm
March 2015
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
