ZXTN04120HFF
120V NPN MEDIUM POWER DARLINGTON TRANSISTOR IN SOT23F
Features
BV
CEO
> 120V
I
C
= 1A Continuous Collector Current
V
CE(SAT)
< 1.5V @ 1A
R
CE(SAT)
= 38mΩ
1.5W Power Dissipation
Complementary PNP Type: ZXTP05120FF
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23F
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.012 grams (Approximate)
Description
This high performance NPN Darlington transistor is housed in the
small outline SOT23 flat package for applications where space is at a
premium.
Applications
Lamp, Relay and Solenoid Drive
Lighting
SOT23F
E
C
B
Top View
Device Symbol
Top View
Pin Configuration
Ordering Information
(Note 4)
Part Number
ZXTN04120HFFTA
Notes:
Compliance
AEC-Q101
Marking
1F6
Reel Size (inches)
7
Tape Width (mm)
8
Quantity per Reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT23F
1F6 = Product Type Marking Code
YW = Date Code Marking
Y = Year : 0~9
W = Week : A~Z : 1~26
a~z : 27~52
z represents 52 & 53 week
1F6
YW
ZXTN04120HFF
Document number: DS33669 Rev. 2 - 2
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ZXTN04120HFF
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
140
120
10
1
4
0.5
Unit
V
V
V
A
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
(Note 5)
Power Dissipation
Linear Derating Factor
(Note 6)
P
D
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
Value
0.84
6.72
1.34
10.72
1.50
12.0
2.0
16.0
149
93
83
60
43.8
-55 to +150
Unit
W
mW/°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
R
θJA
R
θJL
T
J,
T
STG
°C/W
°C/W
°C
ESD Ratings
(Note 10)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
2,000
200
Unit
V
V
JEDEC Class
2
B
5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper.
8. Same as Note 7, whilst measured at t < 5 seconds.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN04120HFF
Document number: DS33669 Rev. 2 - 2
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April 2016
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ZXTN04120HFF
Thermal Characteristics and Derating Information
See Note 7
See Note 7
See Note 6
See Note 5
ZXTN04120HFF
Document number: DS33669 Rev. 2 - 2
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ZXTN04120HFF
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Base Open) (Note 11)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS
(Note 11)
Static Forward Current Transfer Ratio
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
Min
140
120
10
—
—
—
3k
3k
3k
1k
Typ
300
140
16
<1
—
Max
—
—
—
100
10
10
100
—
—
30k
—
Unit
V
V
V
nA
µA
µA
nA
Test Condition
I
C
= 100µA
I
C
= 10mA
I
E
= 100µA
V
CB
= 120V
V
CB
= 120V, T
A
= +100°C
V
CE
= 120V
V
EB
= 8V
I
C
= 50mA, V
CE
= 5V
I
C
= 500mA, V
CE
= 5V
I
C
= 1A, V
CE
= 5V
I
C
= 2A, V
CE
= 5V
I
C
= 250mA, I
B
= 25mA
I
C
= 1A, I
B
= 1mA
I
C
= 2A, I
B
= 5mA
I
C
= 1A, I
B
= 1mA
I
C
= 1A, V
CE
= 5V
I
C
= 100mA, V
CE
= 10V,
f = 20MHz
V
EB
= 500mV, f = 1MHz
V
CB
= 10V, f = 1MHz
V
CC
= 10V,
I
C
= 500mA,
I
B1
= -I
B2
= 0.5mA
<0.1
<1
11k
12k
10k
5k
0.8
1.1
1.1
1.55
1.45
120
68
12.8
507
136
910
369
h
FE
—
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Input Capacitance
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Note:
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
f
T
C
IBO
C
OBO
t
D
t
R
t
S
t
F
—
—
—
—
—
—
—
—
—
—
0.9
1.5
1.5
1.7
1.7
—
90
25
—
—
—
—
V
V
V
MHz
pF
pF
ns
ns
ns
ns
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTN04120HFF
Document number: DS33669 Rev. 2 - 2
4 of 7
www.diodes.com
April 2016
© Diodes Incorporated
ZXTN04120HFF
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
ZXTN04120HFF
Document number: DS33669 Rev. 2 - 2
5 of 7
www.diodes.com
April 2016
© Diodes Incorporated
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