ZXTN19020DFF
20V NPN HIGH GAIN POWER TRANSISTOR
Features
BV
CEO
> 20V
I
C
= 6.5A Continuous Collector Current
Very Low Saturation Voltage V
CE(sat)
< 30mV @ 1A
R
CE(sat)
= 18mΩ
High h
FE
Min 260 @ 2A
1.5W Power Dissipation
High Forward Blocking Voltage
Complementary PNP Type: ZXTP19020DFF
Totally Lead-Free & Fully RoHS Compliant (Notes 1 and 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23F
Case Material: Molded Plastic. “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.012 grams (Approximate)
Description
Advanced process capability has been used to maximize the
performance of this transistor. The SOT23F package is compatible
with the industry standard SOT23 footprint but offers lower profile and
higher dissipation for applications where power density is of utmost
importance.
Applications
MOSFET and IGBT Gate Drivers
LED Driver
Strobe Flash
Motor Drive
Micro Buffers
SOT23F
C
E
B
C
B
E
Top View
Device Symbol
Top View
Pin Configuration
Ordering Information
(Note 4)
Part Number
ZXTN19020DFFTA
Notes:
Compliance
AEC-Q101
Marking
1E3
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT23F
1E3 = Product Type Marking Code
YW = Date Code Marking
Y = Year : 0~9
W = Week : A~Z : 1~26
a~z : 27~52
z represents 52 & 53 week
1E3
YW
ZXTN19020DFF
Document number: DS33677 Rev. 2 - 2
1 of 7
www.diodes.com
June 2016
© Diodes Incorporated
ZXTN19020DFF
Absolute Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage (Forward Blocking)
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEX
V
CEO
V
ECO
V
EBO
I
C
I
CM
I
B
Value
70
70
20
4.5
7
6.5
20
1
Unit
V
V
V
V
V
A
A
A
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
(Note 5)
Power Dissipation
Linear Derating Factor
(Note 6)
P
D
(Note 7)
(Note 8)
(Note 5)
Thermal Resistance, Junction to Ambient
(Note 6)
(Note 7)
(Note 8)
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 9)
R
θJL
T
J,
T
STG
R
θJA
Symbol
Value
0.84
6.72
1.34
10.72
1.50
12.0
2.0
16.0
149
93
83
60
43.77
-55 to +150
C/W
C
Unit
W
mW/C
C/W
ESD Ratings
(Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper.
8. Same as Note 7, whilst measured at t < 5 seconds.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN19020DFF
Document number: DS33677 Rev. 2 - 2
2 of 7
www.diodes.com
June 2016
© Diodes Incorporated
ZXTN19020DFF
Thermal Characteristics and Derating Information
1m
I
C
Collector Current (A)
I
C
Collector Current (A)
V
CE(sat)
10
Limited
µ
100μ
BV
(BR)CEO
=20V
Failure may occur
in this region
1
DC
1s
µ
10μ
100m
100ms
Single Pulse
10ms
o
T
amb
=25 C
50mmx50mm FR-4, 2oz Cu
1μ
µ
T
amb
=25 C
o
1ms
100
s
BV
(BR)CEX
=70V
10m
100m
1
10
0
20
40
60
80
V
CE
Collector-Emitter Voltage (V)
V
CE
Collector-Emitter Voltage (V)
Safe Operating Area
Thermal Resistance ( C/W)
80
70
60
50
40
30
20
10
0
µ
100μ
1m
10m 100m
D=0.2
Single Pulse
D=0.05
D=0.1
Safe Operating Area
50mmx50mm
FR-4, 2oz Cu
Maximum Power (W)
T
amb
=25 C
o
100
Single Pulse
o
T
amb
=25 C
50mmx50mm
FR-4, 2oz Cu
o
D=0.5
10
1
10
100
1k
1
µ
100μ 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Max Power Dissipation (W)
1.6
1.4
1.2
25mmx25mm FR-4, 2oz Cu
50mmx50mm FR-4, 2oz Cu
Pulse Power Dissipation
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160
o
15mmx15mm
FR-4, 1oz Cu
Temperature ( C)
Derating Curve
ZXTN19020DFF
Document number: DS33677 Rev. 2 - 2
3 of 7
www.diodes.com
June 2016
© Diodes Incorporated
ZXTN19020DFF
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Forward Blocking)
Collector-Emitter Breakdown Voltage
(Base Open) (Note 11)
Emitter-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
(Reverse Blocking)
Emitter-Collector Breakdown Voltage
(Base Open)
Collector-Base Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
ON CHARACTERISTICS (Note 11)
Static Forward Current Transfer Ratio
Symbol
BV
CBO
BV
CEX
BV
CEO
BV
EBO
BV
ECX
BV
ECO
I
CBO
I
CEX
I
EBO
Min
70
70
20
7
6
4.5
—
—
—
300
260
160
50
Typ
100
100
30
8.4
8.4
5.7
<1
—
—
<1
450
420
270
80
25
45
70
55
140
940
830
160
297
32.6
129
96
398
90
Max
—
—
—
—
—
—
50
20
100
50
900
—
—
—
30
65
95
75
190
1050
950
—
—
40
—
—
—
—
Unit
V
V
V
V
V
V
nA
µA
nA
nA
Test Condition
I
C
= 100µA
I
C
= 100µA; R
BC
< 1kΩ or
-1V < V
BE
< 0.25V
I
C
= 10mA
I
E
= 100µA
I
E
= 100µA; R
BC
1kΩ or
-0.25V < V
BC
< 0.25V
I
E
= 100µA
V
CB
= 56V
V
CB
= 56V, T
A
= +100°
C
V
CE
= 56V; R
BE
≤
1kΩ or
-1V < V
BE
< 0.25V
V
EB
= 5.6V
I
C
= 0.1A, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
I
C
= 6.5A, V
CE
= 2V
I
C
= 15A, V
CE
= 2V
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 10mA
I
C
= 2A, I
B
= 20mA
I
C
= 2A, I
B
= 40mA
I
C
= 6.5A, I
B
= 180mA
I
C
= 6.5A, I
B
= 180mA
I
C
= 6.5A, V
CE
= 2V
I
C
= 50mA, V
CE
= 5V,
f = 50MHz
V
EB
= 0.5V, f = 1MHz
V
CB
= 10V, f = 1MHz
V
CC
= 10V,
I
C
= 1A,
I
B1
= -I
B2
= 10mA
h
FE
—
Collector-Emitter Saturation Voltage
V
CE(sat)
—
mV
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Input Capacitance
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Note:
V
BE(sat)
V
BE(on)
f
T
C
ibo
C
obo
t
d
t
r
t
s
t
f
—
—
—
—
—
—
—
—
—
mV
mV
MHz
pF
pF
ns
ns
ns
ns
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTN19020DFF
Document number: DS33677 Rev. 2 - 2
4 of 7
www.diodes.com
June 2016
© Diodes Incorporated
ZXTN19020DFF
Typical Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
1
Tamb=25 C
o
0.4
I
C
/I
B
=100
I
C
/I
B
=10
150 C
o
V
CE(SAT)
(V)
V
CE(SAT)
(V)
100m
0.3
100 C
o
10m
I
C
/I
B
=50
I
C
/I
B
=35
I
C
/I
B
=10
0.2
0.1
25 C
o
-55 C
o
1m
1m
10m
100m
1
10
0.0
10m
100m
1
10
I
C
Collector Current (A)
V
CE(SAT)
v I
C
I
C
Collector Current (A)
V
CE(SAT)
v I
C
1.6
150 C
o
V
CE
=2V
800
1.2
I
C
/I
B
=10
-55 C
o
Normalised Gain
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
10
-55 C
o
500
400
300
200
100
0
V
BE(SAT)
(V)
100 C
o
600
Typical Gain (h
FE
)
700
1.0
0.8
0.6
0.4
1m
25 C
o
25 C
o
100 C
150 C
o
o
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
1.0
0.8
V
CE
=2V
25 C
o
V
BE(SAT)
v I
C
o
-55 C
V
BE(ON)
(V)
0.6
0.4
150 C
o
100 C
o
0.2
1m
10m
100m
1
10
I
C
Collector Current (A)
V
BE(ON)
v I
C
ZXTN19020DFF
Document number: DS33677 Rev. 2 - 2
5 of 7
www.diodes.com
June 2016
© Diodes Incorporated
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