A Product Line of
Diodes Incorporated
ZXTN649F
25V NPN LOW SATURATION TRANSISTOR IN SOT23
Features
•
•
•
•
•
•
•
•
•
•
•
BV
CEO
> 25V
BV
CBO
> 35V forward blocking voltage
I
C
= 3A high Continuous Collector Current
Low saturation voltage, V
CE(SAT)
< 120mV @1A
R
CE(SAT)
= 77mΩ for a low equivalent On-Resistance
725mW Power dissipation
h
FE
specified up to 6A for high current gain hold up
Complementary PNP Type: ZXTP749F
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
Case: SOT23
Case Material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight 0.008 grams (approximate)
Applications
•
•
•
MOSFET gate drivers
Power switching in automotive and industrial applications
Motor drive and control
SOT23
C
E
C
B
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Product
ZXTN649FTA
Notes:
Marking
1N7
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
1N7 = Product type Marking Code
ZXTN649F
Document number: DS31900 Rev. 3 - 2
1 of 7
www.diodes.com
January 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN649F
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
35
25
7
3
6
500
Unit
V
V
V
A
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 5)
(Note 5)
(Note 6)
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
725
172
79
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings
(Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
≥
8,000
≥
400
Unit
V
V
JEDEC Class
3B
C
5. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN649F
Document number: DS31900 Rev. 3 - 2
2 of 7
www.diodes.com
January 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN649F
Thermal Characteristics and Derating information
Limited
Max Power Dissipation (W)
I
C
Collector Current (A)
10
V
CE(sat)
0.8
0.6
1
DC
1s
100ms
Single Pulse
T
amb
=25°C
10ms
1ms
100µs
0.4
100m
0.2
10m
100m
V
CE
Collector-Emitter Voltage (V)
1
10
0.0
0
20
40
Temperature (°C)
60
80
100 120 140 160
Safe Operating Area
180
Derating Curve
Single Pulse
T
amb
=25°C
Thermal Resistance (°C/W)
140
120
100
D=0.5
80
60
40
20
0
100µ
1m
10m 100m
D=0.2
Single Pulse
D=0.05
D=0.1
Maximum Power (W)
1k
160
T
amb
=25°C
100
10
1
100µ
1m
10m 100m
Pulse Width (s)
1
10
100
Pulse Width (s)
1
10
100
1k
Transient Thermal Impedance
Pulse Power Dissipation
ZXTN649F
Document number: DS31900 Rev. 3 - 2
3 of 7
www.diodes.com
January 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN649F
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 8)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Min
35
25
7
-
-
200
175
155
50
-
-
-
-
Typ
110
35
8.1
<1
<1
320
280
250
85
70
200
900
780
Max
-
-
-
50
0.5
50
500
-
-
-
120
300
1000
850
Unit
V
V
V
nA
µA
nA
-
Collector-Emitter Saturation Voltage (Note 8)
Base-Emitter Saturation Voltage (Note 8)
Base-Emitter Saturation Voltage (Note 8)
Notes:
V
CE(sat)
V
BE(sat)
V
BE(on)
mV
mV
mV
Test Condition
I
C
= 100µA
I
C
= 10mA
I
E
= 100µA
V
CB
= 28V
V
CB
= 28V, T
A
= +100°C
V
EB
= 5.6V
I
C
= 100mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
I
C
= 6A, V
CE
= 2V
I
C
= 1A, I
B
= 100mA
I
C
= 3A, I
B
= 300mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, V
CE
= 2V
8. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%
ZXTN649F
Document number: DS31900 Rev. 3 - 2
4 of 7
www.diodes.com
January 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN649F
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1
Tamb=25°C
I
C
/I
B
=50
I
C
/I
B
=100
0.3
I
C
/I
B
=10
150°C
V
CE(sat)
(V)
V
CE(sat)
(V)
100m
0.2
100°C
10m
I
C
/I
B
=20
I
C
/I
B
=10
0.1
25°C
-55°C
1m
1m
I
C
Collector Current (A)
10m
100m
1
0.0
10m
I
C
Collector Current (A)
100m
1
V
CE(sat)
v I
C
1.2
300
V
CE
=2V
150°C
I
C
/I
B
=10
V
CE(sat)
v I
C
Typical Gain (hFE)
1.0
-55°C
25°C
200
25°C
V
BE(sat)
(V)
100°C
0.8
0.6
150°C
100
-55°C
0.4
0.2
1m
10m
100°C
0
1m
I
C
Collector Current (A)
10m
100m
1
10
I
C
Collector Current (A)
100m
1
h
FE
v I
C
1.2
V
CE
=2V
25°C
V
BE(sat)
v I
C
200
180
160
140
120
100
80
60
40
20
0
10m
f = 1MHz
Cibo
V
BE(on)
(V)
0.8
0.6
0.4
100°C
150°C
Capacitance (pF)
1.0
-55°C
Cobo
0.2
1m
I
C
Collector Current (A)
10m
100m
1
100m
Voltage(V)
1
10
V
BE(on)
v I
C
Capacitance v Voltage
ZXTN649F
Document number: DS31900 Rev. 3 - 2
5 of 7
www.diodes.com
January 2013
© Diodes Incorporated
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