DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BSR12
PNP switching transistor
Product specification
1999 Jul 23
Philips Semiconductors
Product specification
PNP switching transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 15 V).
APPLICATIONS
•
High-speed, saturated switching applications for
industrial service in thick and thin-film circuits.
Top view
handbook, halfpage
BSR12
3
3
1
2
1
2
MAM256
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
MARKING
TYPE NUMBER
BSR12
MARKING CODE
B5p
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
CM
P
tot
T
j
h
FE
f
T
t
off
PARAMETER
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
junction temperature
DC current gain
transition frequency
turn-off time
I
C
=
−10
mA; V
CE
=
−1
V
I
C
=
−50
mA; V
CE
=
−1
V
f = 500 MHz; I
C
=
−50
mA; V
CE
=
−10
V
T
amb
≤
25
°C
open emitter
open base
CONDITIONS
−
−
−
−
−
30
30
1.5
MIN.
MAX.
−15
−15
−200
250
150
−
120
−
30
GHz
ns
V
V
mA
mW
°C
UNIT
I
Con
=
−30
mA; I
Bon
=
−3
mA; I
Boff
= 3mA
−
1999 Jul 23
2
Philips Semiconductors
Product specification
PNP switching transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−65
−
MIN.
MAX.
−15
−15
−3
−100
−200
250
+150
150
BSR12
UNIT
V
V
V
mA
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on a ceramic substrate 8
×
10
×
0.7 mm.
PARAMETER
thermal resistance from junction to
ambient
note 1
CONDITIONS
VALUE
500
UNIT
K/W
1999 Jul 23
3
Philips Semiconductors
Product specification
PNP switching transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CES
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
V
CEOsust
V
CEsat
PARAMETER
collector cut-off current
collector cut-off current
breakdown voltage
breakdown voltage
breakdown voltage
CONDITIONS
I
E
= 0; V
CB
=
−10
V
V
BE
= 0; V
CE
=
−10
V
I
E
= 0; I
C
=
−10 µA
V
BE
= 0; I
C
=
−10 µA
I
C
= 0; I
E
=
−100 µA
−
−
−15
−15
−3
−15
−
−
−725
−800
30
30
30
30
20
1.5
−
−
−
−
I
E
= 0; V
CB
=
−10
V; T
amb
= 125
°C −
MIN.
−
−
−
−
−
−
−
−
−180
−
−
−
−
−
−
−
−
−
−
−
−
−
−
TYP.
BSR12
MAX.
−50
−5
−50
−
−
−
−
−130
−270
−450
−920
−1150
−1500
−
−
120
−
−
−
4.5
6
UNIT
nA
µA
nA
V
V
V
V
mV
mV
mV
mV
mV
mV
collector-emitter sustaining I
B
= 0; I
C
=
−10
mA
voltage
collector-emitter saturation
voltage
I
C
=
−10
mA; I
B
=
−1
mA; note 1
I
C
=
−50
mA; I
B
=
−5
mA; note 1
I
C
=
−10
mA; I
B
=
−1
mA; note 1
I
C
=
−50
mA; I
B
=
−5
mA; note 1
I
C
=
−1
mA; V
CE
=
−1
V; note 1
I
C
=
−10
mA; V
CE
=
−1
V; note 1
I
C
=
−50
mA; V
CE
=
−1
V; note 1
I
C
=
−50
mA; V
CE
=
−1
V;
T
amb
= 55
°C;
note 1
I
C
=
−100
mA; V
CE
=
−1
V; note 1
I
C
=
−100
mA; I
B
=
−10
mA; note 1
−
V
BEsat
base-emitter saturation
voltage
I
C
=
−100
mA; I
B
=
−10
mA; note 1
−900
h
FE
DC current gain
f
T
C
c
C
e
t
on
t
off
transition frequency
collector capacitance
emitter capacitance
IC =
−50
mA; V
CE
=
−10
V;
f = 500 MHz
I
E
= I
e
= 0; V
CB
=
−5
V
I
C
= I
c
= 0; V
EB
=
−0.5
V
V
i
= −6.85
V; V
BB
= 0 V;
I
Con
=
−30
mA; I
Bon
=
−3.0
mA
V
i
=
11.7 V; V
BB
= −9.85
V;
I
Con
=
−30
mA; I
Bon
=
−3
mA;
I
Boff
= 3 mA
GHz
pF
pF
Switching time
(see Fig.2)
turn-on time
turn-off time
20
30
ns
ns
Note
1. Pulse test: t
p
= 300
µs; δ
= 0.01.
1999 Jul 23
4
Philips Semiconductors
Product specification
PNP switching transistor
BSR12
VCC =
−3
V
VBB
R1
handbook, halfpage
R2
C
R3
DUT
50
Ω
MGS460
Vo
Vi
R1 = 94
Ω;
R2 = 1 kΩ; R3 = 2 kΩ; C = 0.1
µF.
Pulse generator: Pulse duration t
p
= 400 ns. Rise time t
r
< 1 ns. Output impedance Z
O
= 50
Ω.
Sampling scope: Rise time t
r
< 1 ns. Input impedance Z
i
= 100 kΩ.
Fig.2 Test circuit for switching times.
handbook, full pagewidth
70
MGS461
hFE
60
typ
50
40
30
20
−10
−1
V
CE
=
−
1 V; T
amb
= 25°C.
−1
−10
−10
2
IC (mA)
−10
3
Fig.3 DC current gain; typical values.
1999 Jul 23
5
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