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SIDC07D60AF6_10

Description
Fast switching diode 600V Emitter Controlled technology 70 μm chip
File Size107KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet View All

SIDC07D60AF6_10 Overview

Fast switching diode 600V Emitter Controlled technology 70 μm chip

SIDC07D60AF6
Fast switching diode
A
Features:
600V Emitter Controlled technology 70 µm
chip
soft , fast switching
low reverse recovery charge
small temperature coefficient
This chip is used for:
power modules and discrete
devices
Applications:
SMPS, resonant applications,
drives
C
Chip Type
SIDC07D60AF6
V
R
600V
I
F
22.5A
Die Size
2.65 x 2.65 mm
2
Package
sawn on foil
Mechanical Parameters
Raster size
Area total
Anode pad size
Thickness
Wafer size
Max. possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
2.65 x 2.65
7.02
2.168 x 2.168
70
150
2156
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al,
≤250µm
0.65mm; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
µm
mm
mm
2
Edited by INFINEON Technologies, IMM PSD, L4294M, Edition 2.1, 09.03.2010
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