BSC123N10LSG datasheet, PDF - EEWORLD Datasheet

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BSC123N10LSG: Description10.6 A, 100 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size439KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSC123N10LSG Overview

10.6 A, 100 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET

BSC123N10LSG Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-F5
Contacts	8
Reach Compliance Code	compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	155 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	71 A
Maximum drain current (ID)	10.6 A
Maximum drain-source on-resistance	0.0123 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F5
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	114 W
Maximum pulsed drain current (IDM)	284 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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BSC123N10LS G

OptiMOS™2

Power-Transistor

Features

• N-channel, logic level

• Excellent gate charge x

DS(on)

product (FOM)

• Very low on-resistance

DS(on)

• 150 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

for target application

Product Summary

DS(on),max

100

12.3

mΩ

PG-TDSON-8

• Ideal for high-frequency switching and synchronous rectification

•Halogen-free according to IEC61249-2-21

Type

BSC123N10LS G

Package

PG-TDSON-8

Marking

123N10LS

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol Conditions

=25 °C

=100 °C

=25 °C,

thJA

=50 K/W

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

D,pulse

tot

stg

=25 °C

=50 A,

=25

Ω

Value

10.6

284

155

±20

114

-55 ... 150

55/150/56

°C

Unit

Rev. 2.08

page 1

2009-11-04

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