IP Semiconductor Co., Ltd.
High current density due to double mesa technology;
SIPOS and Glass Passivation. IPT0806-xx series are
suitable for general purpose AC Switching.
They can be used as an ON/OFF function In application
such as static relays, heating regulation, Induction
motor stating circuits… or for phase Control operation
light dimmers, motor speed Controllers.
IPT0806-xx series is 3 Quadrants triacs, This is specially
recommended for use on inductive Loads..
IPT0806-xxD
DPAK(TO-252)
MAIN FEATURES
Symbol
I
T(RMS)
V
DRM
/ V
RRM
V
TM
Value
8
600
≤ 1.55
Unit
A
V
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
RMS on–state current
(Full sine wave)
Tj = 25℃
Tj = 25℃
Tc =95℃
f = 60Hz t = 16.7ms
f = 50 Hz t = 20ms
Symbol
Tstg
Tj
V
DRM
V
RRM
V
DSM
V
RSM
I
T(RMS)
I
TSM
I²t
dI / dt
I
GM
P
G(AV)
Value
-40 to +150
-40 to +125
600
600
700
700
8
80
84
36
50
4
1
Unit
℃
V
V
A
A
A²s
A/us
A
W
Non repetitive surge peak on–state Current
(full cycle, Tj = 25℃)
I²t Value for fusing
t
p = 10ms
Critical Rate of rise of on-state current
I
G
= 2xI
GT
,
t
r ≤ 100ns, f = 120Hz, Tj = 125
℃
Peak gate current
Average gate power dissipation
t
p = 20us, Tj = 125
℃
Tj = 125
℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
1
IPT0806-xxD
ELECTRICAL CHARACTERISTICS
(Tj = 25
℃
unless otherwise specified)
IPT0806-xxD
Symbol
I
GT
Test Condition
Quadrant
SE
I – II – III
MAX
MAX
MIN
25
MAX
II
30
MAX
MIN
15
40
5.4
MIN
2.8
-
60
35
500
-
-
4.5
80
50
1000
-
-
7.0
10
CE
35
1.3
0.2
50
70
BE
50
Unit
mA
V
V
V
D
= 12V R
L
= 33Ω
V
GT
V
GD
V
D
=V
DRM,
R
L
=3.3KΩ,
Tj = 125
℃
I
G =
1.2 I
GT
I
T
= 500mA
I – II – III
I – II – III
I – III
I
L
I
H
dV/dt
mA
mA
V/us
V
D
= 67% V
DRM
gate open Tj = 125
℃
(dV/dt) c=0.1V/us Tj = 125
℃
(dI/dt)c
(dV/dt) c=10V/us Tj = 125
℃
Without snubber Tj = 125
℃
A/ms
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Test Conditions
I
TM
= 17A, t p = 380uS
V
D
= V
DRM
V
R
= V
RRM
Tj = 125
℃
Tj = 125
℃
Tj = 125
℃
Value(MAX)
1.55
5
1
Unit
V
uA
mA
THERMAL RESISTANCES
Symbol
R
th
(j – c)
Parameter
Junction to case (AC)
Value
1.6
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
2
IPT0806-xxD
PACKAGE MECHANICAL DATA
TO-252(DPAK)
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
3
IPT0806-xxD
Dimensions
Ref
Min
A
A2
B
B2
C
C2
D
E
G
H
L1
L2
V1
V1
0º
1.37
4º
8º
0º
2.2
0.03
0.55
5.1
0.45
0.48
6
6.4
4.40
9.35
0.8
1.5
0.054
4º
8º
Millimeters
Typ
Max
2.4
0.23
0.65
5.4
0.62
0.62
6.2
6.7
4.70
10.1
Inches
Min
0.086
0.001
0.021
0.200
0.017
0.019
0.236
0.252
0.173
0.368
0.031
0.059
Typ
Max
0.095
0.009
0.026
0.212
0.024
0.024
0.244
0.264
0.185
0.397
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4
IPT0806-xxD
IPT0806-xxD
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4
Embedded System
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