BG5412K
Dual N-Channel MOSFET Tetrode
•
Designed for input stages of 2 band tuners
•
Two AGC amplifiers in one single package,
with on-chip internal switch
•
Only one switching line to control both FETs
•
Integrated gate protection diodes
•
Ultra low noise figure
•
Excellent cross modulation at gain reduction
•
Integrated ESD gate protection diodes
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
Detailed functional diagram on page 5
4
5
6
1
2
3
BG5412K
6
5
4
A
1
2
B
3
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BG5412K
Package
SOT363
1=G1* 2=G2
Pin Configuration
3=G1** 4=D**
5=S
6=D*
Marking
K2s
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
1
2009-10-01
BG5412K
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
amp. A
amp. B
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
T
S
≤
94 °C
Storage temperature
Channel temperature
T
stg
T
ch
-55 ... 150
150
°C
I
G1S
,
I
G2S
V
G1S
,
V
G2S
P
tot
Symbol
V
DS
I
D
25
25
±
1
±
6
200
mA
V
mW
Value
8
Unit
V
mA
Thermal Resistance
Parameter
Symbol
R
thchs
Value
≤
280
Unit
Channel - soldering point
1)
1
For
K/W
calculation of
R
thJA please refer to Application Note Thermal Resistance
2
2009-10-01
BG5412K
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Drain-source breakdown voltage
I
D
= 100 µA,
V
G1S
= 0 ,
V
G2S
= 0
Gate1-source breakdown voltage
+I
G1S
= 10 mA,
V
G2S
= 0 ,
V
DS
= 0
Gate2-source breakdown voltage
+I
G2S
= 10 mA,
V
G1S
= 0 ,
V
DS
= 0
Gate1-source leakage current
V
G1S
= 6 V,
V
G2S
= 0 ,
V
DS
= 0
Gate2-source leakage current
V
G2S
= 8 V,
V
G1S
= 0
Drain current
V
DS
= 5 V,
V
G1S
= 0 ,
V
G2S
= 4 V
Drain-source current
V
DS
= 5 V,
V
G2S
= 4 V,
R
G1
= 120 kΩ,
amp. B
V
DS
= 5 V,
V
G2S=
4 V, selfbiased,
amp. A
Gate1-source pinch-off voltage
V
DS
= 5 V,
V
G2S
= 4 V,
I
D
= 100 µA
Gate2-source pinch-off voltage
V
DS
= 5 V,
I
D
= 100 µA
V
G2S(p)
-
0.7
-
V
G1S(p)
-
0.7
-
V
-
-
14
18
-
-
I
DSX
mA
I
DSS
-
-
100
µA
+I
G2SS
-
-
50
+I
G1SS
-
-
50
nA
+V
(BR)G1SS
+V
(BR)G2SS
6
6
-
-
15
15
V
(BR)DS
12
-
-
V
typ.
max.
Unit
3
2009-10-01
BG5412K
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
Forward transconductance
amp. A
amp. B
Gate1 input capacitance
amp. A
amp. B
Output capacitance
amp. A
amp. B
Power gain
f=
800 MHz, amp. A
f=
800 MHz, amp. B
f=
45 MHz, amp. A
f=
45 MHz, amp. B
Noise figure
f=
800 MHz, amp. A
f=
800 MHz, amp. B
f=
45 MHz, amp. A
f=
45 MHz, amp. B
Gain control range
V
G2S
= 4...0 V,
f
= 800 MHz
Cross-modulation
k
=
1%,
f
W
=
50MHz,
f
unw
=
60MHz
X
mod
amp. A,
AGC
= 0 dB
amp. B,
AGC
= 0 dB
amp. A,
AGC
= 10 dB
amp. B,
AGC
= 10 dB
amp. A,
AGC
= 40 dB
amp. B,
AGC
= 40 dB
-
-
-
-
-
-
-
97
96
94
91
105
103
-
-
-
-
-
-
∆G
p
F
-
-
-
-
-
1.1
1.2
0.8
0.9
45
-
-
-
-
-
G
p
-
-
-
-
24
24
34
31
-
-
-
-
dB
C
dss
-
-
0.9
0.8
-
-
dB
C
g1ss
-
-
2.2
2
-
-
g
fs
-
-
33
30
-
-
pF
typ.
max.
mS
AC Characteristics
V
DS
= 5 V,
V
G2
= 4 V,
I
D
= 10 mA (verified by random sampling)
Unit
4
2009-10-01
BG5412K
Functional diagram
shows pinning of BG5412K, switching pin at PIN 3
(RFout
A
)
D
A
(Ground)
S
(RFout
B
)
Amp. B
Amp. A
V
GG
bias network partially integrated
bias network fully
integrated
D
B
S
Amp. A
Amp. B
V
gg
= 5 V : Amp. A is OFF ; Amp. B is ON
V
gg
= 0 V : Amp. A is ON ; Amp. B is OFF
Amp. A and Amp. B share
G2 and S pins
G2
Int.
switch
G2
(RFin
A
)
G1
A
G2
(AGC)
(RFin
B
)
Rg1
G1
B
V
GG
5
2009-10-01
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