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MUR429G

Description
4 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size54KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
Download Datasheet Parametric View All

MUR429G Overview

4 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD

MUR429G Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionLEAD FREE, PLASTIC, CASE 267-03, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingMATTE Tin
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationULTRA FAST RECOVERY POWER
Phase1
Maximum reverse recovery time0.0750 us
Maximum repetitive peak reverse voltage600 V
Maximum average forward current4 A
Maximum non-repetitive peak forward current110 A
R
MUR405G THUR MUR460G
SUPER FAST RECTIFIER
Reverse Voltage: 50 to 600 Volts
Forward Current:4.0Amperes
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Low forward voltage drop
High current capability, High reliability
Low power loss, high efficiency
High surge current capability
High speed switching, Low leakage
High temperature soldering guaranteed:260
/10 seconds at terminals
Component in accordance to RoHS 2011/65/EU
DO-201AD
1.0(25.4)
MIN
0.220(5.6)
0.190(4.8)
DIA
0.375(9.50)
0.285(7.20)
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Epoxy: UL94V-0 rate flame retardant
Lead: Plated axial leads, solderable per MIL-STD-750,method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.042ounce, 1
.
19 grams
0.052(1.32)
0.045(1.14)
DIA
1.0(25.4)
MIN
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25
ambient temperature unless otMURwise specified. Single phase ,half wave ,60H
Z
,resistive or inductive
load. For capacitive load, derate current by 20%.)
Symbols
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375"(9.5mm)lead length
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
at 4.0 A
Maximum DC Reverse Current
at rated DC blocking voltage
T
A
=25
°
C
MUR
405G
50
35
50
MUR
410G
100
70
100
MUR
420G
200
140
200
MUR
430G
300
210
300
4.0
MUR
440G
400
280
400
MUR
450G
500
350
500
MUR
460G
600
420
600
Units
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
V
olts
V
olts
V
olts
A
mpS
A
mps
150
1.0
10.0
1.28
V
olts
A
T
A
=100
°
C
50
Maximum reverse recovery time(Note1)
Typical junction capacitance(Note2)
Operating junction and storage temperature
range
T
rr
C
J
T
J
T
STG
45
80
-55 to+150
-55 to+150
60
ns
P
F
°C
Note:
1.Test conditions: I
F=
0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1MH
Z
and applied reverse voltage of 4.0 Volts.
JINAN JINGHENG ELECTRONICS CO., LTD.
2
-
1
HTTP
://
WWW.JINGHENGGROUP.COM
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