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BLF6G20-110_09

Description
Power LDMOS transistor
File Size73KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

BLF6G20-110_09 Overview

Power LDMOS transistor

BLF6G20-110; BLF6G20LS-110
Power LDMOS transistor
Rev. 03 — 13 January 2009
Product data sheet
1. Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
1930 to 1990
V
DS
(V)
28
P
L(AV)
(W)
25
G
p
(dB)
19
η
D
(%)
32
IMD3
(dBc)
−34
[1]
ACPR
(dBc)
−38
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz,
a supply voltage of 28 V and an I
Dq
of 900 mA:
N
Average output power = 25 W
N
Power gain = 19 dB
N
Efficiency = 32 %
N
IMD3 =
−34
dBc
N
ACPR =
−38
dBc
I
Easy power control
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (1800 MHz to 2000 MHz)
I
Internally matched for ease of use
I
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
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