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BLF6G38-50_10

Description
WiMAX power LDMOS transistor
File Size139KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

BLF6G38-50_10 Overview

WiMAX power LDMOS transistor

BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
Rev. 02 — 1 June 2010
Product data sheet
1. Product profile
1.1 General description
50 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3800 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation f (MHz)
V
DS
(V) P
L(AV)
(W) P
L(M)[1]
(W) G
p
(dB)
η
D
(%) ACPR
885k
(dBc) ACPR
1980k
(dBc)
9
70
14
23
−49
[3]
−64
[3]
1-carrier N-CDMA
[2]
3400 to 3600 28
[1]
[2]
[3]
P
L(M)
stands for peak output power.
Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.23 MHz.
Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
synchronization and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 %
probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of
3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an I
Dq
of 450 mA, a
power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W:
Qualified up to a maximum V
DS
operation of 32 V
Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation
Internally matched for ease of use
Low gold plating thickness on leads
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
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