BLF872
UHF power LDMOS transistor
Rev. 01 — 20 February 2006
Product data sheet
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 250 W broadband over the full UHF band from
470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this
device makes it ideal for digital transmitter applications.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s
Typical 2-tone performance at 860 MHz, a drain-source voltage V
DS
of 32 V and a
quiescent drain current I
Dq
= 2
×
0.9 A:
x
Peak envelope power load power P
L(PEP)
= 300 W
x
Gain G
p
= 15 dB
x
Drain efficiency
η
D
= 43 %
x
Third order intermodulation distortion IMD3 =
−28
dBc
s
Typical DVB performance at 858 MHz, a drain-source voltage V
DS
of 32 V and a
quiescent drain current I
Dq
= 2
×
0.9 A:
x
Average output power P
L(AV)
= 70 W
x
Gain G
p
= 15 dB
x
Drain efficiency
η
D
= 30 %
x
Third order intermodulation distortion IMD3 =
−28
dBc (4.3 MHz from center
frequency)
s
Advanced flange material for optimum thermal behavior and reliability
s
Excellent ruggedness
s
High power gain
s
Designed for broadband operation (UHF band)
s
Excellent reliability
s
Internal input and output matching for high gain and optimum broadband operation
s
Source on underside eliminates DC isolators, reducing common-mode inductance
s
Easy power control
Philips Semiconductors
BLF872
UHF power LDMOS transistor
1.3 Applications
s
Communication transmitter applications in the UHF band
s
Industrial applications in the UHF band
1.4 Quick reference data
Table 1:
Quick reference data
Typical RF performance at V
DS
= 32 V and T
h
= 25
°
C in a common-source narrowband 860 MHz
test circuit.
[1]
Mode of operation
CW, class AB
2-tone, class AB
PAL BG
DVB-T (8K OFDM)
[1]
[2]
[3]
f
(MHz)
860
f
1
= 860;
f
2
= 860.1
860 (ch69)
858
P
L
(W)
300
-
P
L(PEP)
P
L(AV)
(W)
(W)
-
300
-
-
-
70
G
p
(dB)
14
15
15
15
η
D
(%)
55
42
42
30
IMD3
(dBc)
-
−28
-
−28
[3]
300 (peak sync.)
[2]
-
-
-
T
h
is the heatsink temperature.
Black video signal, sync expansion: input sync = 33 %; output sync
≥
27 %.
Measured dBc at 4.3 MHz from center frequency.
2. Pinning information
Table 2:
drain 1
drain 2
gate 1
gate 2
source
[1]
Connected to flange.
Pinning
Pin
1
2
3
4
5
[1]
Description
Simplified outline
1
2
5
3
4
3. Ordering information
Table 3:
Ordering information
Package
Name
BLF872
-
Description
Version
flanged LDMOST ceramic package; 2 mounting holes; 4 SOT800-1
leads
Type number
BLF872_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 February 2006
2 of 16
Philips Semiconductors
BLF872
UHF power LDMOS transistor
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
-
−65
-
Max
65
±13
+150
200
Unit
V
V
°C
°C
5. Thermal characteristics
Table 5:
Symbol
R
th(j-c)
R
th(j-h)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from junction to case
thermal resistance from junction to heatsink
Conditions
T
h
= 25
°C
T
h
= 25
°C
[1]
[1] [2]
Typ
0.32
0.4
Unit
K/W
K/W
T
h
is the heatsink temperature.
R
th(j-h)
is dependent on the applied thermal compound and clamping/mounting of the device.
6. Characteristics
Table 6:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
iss
C
oss
C
rss
[1]
[2]
Parameter
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
Conditions
[1]
V
GS
= 0 V; I
D
= 5 mA
V
DS
= 20 V; I
D
= 250 mA
V
GS
= 0 V; V
DS
= 32 V
V
GS
= V
GSth
+ 6 V; V
DS
= 10 V
V
GS
= 10 V; V
DS
= 0 V
V
GS
= 20 V; I
D
= 16 A
V
GS
= V
GSth
+ 6 V; I
D
= 9 A
V
GS
= 0 V; V
DS
= 32 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 32 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 32 V; f = 1 MHz
[2]
[2]
[2]
Min
65
5.2
-
-
-
-
-
-
-
-
Typ
-
-
-
41
-
10
80
200
70
2.5
Max
-
6.2
2.2
-
40
-
-
-
-
-
Unit
V
V
µA
A
nA
S
mΩ
pF
pF
pF
I
D
is the drain current.
Capacitance values without internal matching.
BLF872_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 February 2006
3 of 16
Philips Semiconductors
BLF872
UHF power LDMOS transistor
200
C
oss
(pF)
150
001aad743
100
50
0
0
10
20
30
40
50
V
DS
(V)
V
GS
= 0 V; f = 1 MHz.
Fig 1. Output capacitance C
oss
as a function of drain-source voltage V
DS
; typical values
per section; capacitance value without internal matching
7. Application information
Table 7:
RF performance in a common-source 860 MHz narrowband test circuit
T
h
= 25
°
C unless otherwise specified.
[1]
Mode of operation
2-tone, class AB
DVB-T (8K OFDM)
[1]
f
(MHz)
f
1
= 860;
f
2
= 860.1
858
V
DS
(V)
32
32
I
Dq
(A)
2
×
0.9
2
×
0.9
P
L(PEP)
(W)
300
-
P
L(AV)
(W)
-
70
G
p
(dB)
> 14
> 14
η
D
(%)
> 40
> 26
IMD3
(dBc)
≤ −25
≤ −25
∆G
p
(dB)
≤
1
-
Sync. compression: input sync.
≥
33 %, output sync. 27 %.
BLF872_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 February 2006
4 of 16
Philips Semiconductors
BLF872
UHF power LDMOS transistor
16
G
p
(dB)
14
G
p
001aad744
60
η
D
,
η
add
(%)
η
D
η
add
40
12
20
10
0
100
200
300
P
L
(W)
0
400
V
DS
= 32 V; f = 860 MHz; I
Dq
= 2
×
0.9 A; T
h
= 25
°C.
Fig 2. CW power gain G
p
, drain efficiency
η
D
and power added efficiency
η
add
as a function of output power P
L
;
typical values
16
G
p
(dB)
14
IMD3
001aad745
0
IMD
(dBc)
−20
16
G
p
(dB)
14
001aad746
60
η
D
,
η
add
(%)
40
G
p
G
p
η
D
η
add
12
IMD5
−40
12
20
10
0
50
100
150
−60
200
250
P
L(AV)
(W)
10
0
50
100
150
0
200
250
P
L(AV)
(W)
V
DS
= 32 V; f
1
= 860 MHz; f
2
= 860.1 MHz;
I
Dq
= 2
×
0.9 A; T
h
= 25
°C.
V
DS
= 32 V; f
1
= 860 MHz; f
2
= 860.1 MHz;
I
Dq
= 2
×
0.9 A; T
h
= 25
°C.
Fig 3. 2-tone power gain G
p
and intermodulation
distortion IMD as a function of average output
power P
L(AV)
; typical values
Fig 4. 2-tone power gain G
p
, drain efficiency
η
D
and
power added efficiency
η
add
as a function of
average output power P
L(AV)
; typical values
BLF872_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 February 2006
5 of 16
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