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BLS2731-20

Description
Microwave power transistor
CategoryDiscrete semiconductor    The transistor   
File Size58KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BLS2731-20 Overview

Microwave power transistor

BLS2731-20 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
Shell connectionBASE
Maximum collector current (IC)3 A
ConfigurationSINGLE
Minimum DC current gain (hFE)25
highest frequency bandS BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)60 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D324
BLS2731-20
Microwave power transistor
Product specification
Supersedes data of 1998 Mar 06
1998 Nov 25
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