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MT44K16M36RB-093E:B

Description
DDR DRAM, 16MX36, CMOS, PBGA168, FBGA-168
Categorystorage    storage   
File Size2MB,118 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT44K16M36RB-093E:B Overview

DDR DRAM, 16MX36, CMOS, PBGA168, FBGA-168

MT44K16M36RB-093E:B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
package instructionTBGA,
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time11 weeks
access modeMULTI BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeS-PBGA-B168
JESD-609 codee1
length13.5 mm
memory density603979776 bit
Memory IC TypeDDR DRAM
memory width36
Number of functions1
Number of ports1
Number of terminals168
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
organize16MX36
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Package shapeSQUARE
Package formGRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Celsius)260
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)1.42 V
Minimum supply voltage (Vsup)1.28 V
Nominal supply voltage (Vsup)1.35 V
surface mountYES
technologyCMOS
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width13.5 mm
576Mb: x18, x36 RLDRAM 3
Features
RLDRAM 3
MT44K32M18 – 2 Meg x 18 x 16 Banks
MT44K16M36 – 1 Meg x 36 x 16 Banks
Features
• 1066 MHz DDR operation (2133 Mb/s/ball data
rate)
• 76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock
frequency)
• Organization
– 32 Meg x 18, and 16 Meg x 36 common I/O (CIO)
– 16 banks
• 1.2V center-terminated push/pull I/O
• 2.5V V
EXT
, 1.35V V
DD
, 1.2V V
DDQ
I/O
• Reduced cycle time (
t
RC (MIN) = 7.5 - 12ns)
• SDR addressing
• Programmable READ/WRITE latency (RL/WL) and
burst length
• Data mask for WRITE commands
• Differential input clocks (CK, CK#)
• Free-running differential input data clocks (DKx,
DKx#) and output data clocks (QKx, QKx#)
• On-die DLL generates CK edge-aligned data and
differential output data clock signals
• 64ms refresh (128K refresh per 64ms)
• 168-ball BGA package
• 40Ω or 60Ω matched impedance outputs
• Integrated on-die termination (ODT)
• Single or multibank writes
• Extended operating range (200–1066 MHz)
• READ training register
• Multiplexed and non-multiplexed addressing capa-
bilities
• Mirror function
• Output driver and ODT calibration
• JTAG interface (IEEE 1149.1-2001)
Options
1
• Clock cycle and
t
RC timing
– 0.93ns and
t
RC (MIN) = 7.5ns
(RL3-2133)
– 0.93ns and
t
RC (MIN) = 8ns
(RL3-2133)
– 1.07ns and
t
RC (MIN) = 8ns
(RL3-1866)
– 1.25ns and
t
RC (MIN) = 8ns
(RL3-1600)
– 1.25ns and
t
RC (MIN) = 10ns
(RL3-1600)
– 1.25ns and
t
RC (MIN) = 12ns
(RL3-1600)
• Configuration
– 32 Meg x 18
– 16 Meg x 36
• Operating temperature
– Commercial (T
C
= 0° to +95°C)
– Industrial (T
C
= –40°C to +95°C)
• Package
– 168-ball BGA (Pb-free)
• Revision
Note:
Marking
-093F
-093E
-107E
-125F
-125E
-125
32M18
16M36
None
IT
RB
:A / :B
1. Not all options listed can be combined to
define an offered product. Use the part cat-
alog search on www.micron.com for availa-
ble offerings.
09005aef84003617
576mb_rldram3.pdf - Rev. J 8/16 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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