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1N7039CCU1E3

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 17.5A, 150V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size395KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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1N7039CCU1E3 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 17.5A, 150V V(RRM), Silicon,

1N7039CCU1E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationFAST RECOVERY POWER
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.6 V
JESD-30 codeR-CBCC-N3
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current17.5 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Maximum repetitive peak reverse voltage150 V
Maximum reverse current500 µA
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM
1N7039CCU1
Silicon Dual Schottky Power Rectifier
35 Amp, 150 Volt
Qualified per MIL-PRF-19500/737
DESCRIPTION
This Dual Schottky rectifier device is military qualified up to a JANTXV level for high-reliability
applications. They are hermetically sealed in a common cathode configuration offering very
fast switching characteristics compared to fast or ultrafast rectifiers.
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered equivalent of 1N7039
Hermetically isolated U1 package
Internal metallurgical bonds
Temperature independent switching behavior
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/737
RoHS compliant versions available (commercial grade only)
U1 (SMD-1)
Package
Also available in:
TO-257AA package
(leaded)
1N7047CCT3
APPLICATIONS / BENEFITS
Schottky barrier rectifier diodes (dual) for military, space and other high reliability applications
Switching power supplies or other applications requiring extremely fast switching and essentially no
switching losses.
Low forward voltage drop
High forward surge capability
Inherently radiation hard >100 krads as described in
MicroNote 050
TO-254AA package
(leaded)
1N7039CCT1
MAXIMUM RATINGS
@ T
A
= +25
o
C unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
(2.3
o
C/W maximum)
Symbol
T
J
and T
STG
R
ӨJC
V
RWM
C
J
I
O
I
FSM
Value
-65 to +150
1.67
150
350
35
200
Unit
o
C
C/W
V
pF
A
A
o
Working Peak Reverse Voltage
Junction Capacitance
o
Average DC Output Current @ T
C
= +100 C
Non-Repetitive Sinusoidal Surge Current @ t
p
= 8.3 ms,
o
T
C
= +25 C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0321-1, Rev. 1 (10/23/13)
©2013 Microsemi Corporation
Page 1 of 5

1N7039CCU1E3 Related Products

1N7039CCU1E3 JANTXV1N7039CCU1 JAN1N7039CCU1 JANTX1N7039CCU1
Description Rectifier Diode, Schottky, 1 Phase, 2 Element, 17.5A, 150V V(RRM), Silicon, SCHOTTKY DIODE RECTIFIER SCHOTTKY DIODE
Is it Rohs certified? conform to incompatible incompatible incompatible
Maker Microsemi Microsemi Microsemi Microsemi
Reach Compliance Code compliant unknown compliant unknown
Other features HIGH RELIABILITY HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY HIGH RELIABILITY, LOW POWER LOSS
application FAST RECOVERY POWER EFFICIENCY FAST RECOVERY POWER EFFICIENCY
Shell connection CATHODE ISOLATED CATHODE ISOLATED
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-CBCC-N3 R-CBCC-N3 R-CBCC-N3 R-CBCC-N3
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A
Number of components 2 2 2 2
Phase 1 1 1 1
Number of terminals 3 3 3 3
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
Maximum repetitive peak reverse voltage 150 V 150 V 150 V 150 V
surface mount YES YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Certification status - Qualified Qualified Qualified
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