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JANTXVM19500/483-04

Description
Bridge Rectifier Diode, Avalanche, 1 Phase, 10A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS, MD PACKAGE-4
CategoryDiscrete semiconductor    diode   
File Size375KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

JANTXVM19500/483-04 Overview

Bridge Rectifier Diode, Avalanche, 1 Phase, 10A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS, MD PACKAGE-4

JANTXVM19500/483-04 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionS-LUFM-X4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage880 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeS-LUFM-X4
Maximum non-repetitive peak forward current100 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialGLASS
Package shapeSQUARE
Package formFLANGE MOUNT
Certification statusNot Qualified
GuidelineMIL-19500
Maximum repetitive peak reverse voltage800 V
surface mountNO
technologyAVALANCHE
Terminal formUNSPECIFIED
Terminal locationUPPER
469-01 – 469-05
Qualified Level:
JANTX and JANTXV
Available
Single Phase 10 Amp Rectifier Bridge
Qualified per MIL-PRF-19500/469
DESCRIPTION
This series of high-current single-phase bridge rectifiers are constructed with hermetically sealed
rectifiers built with the same design and construction techniques used in military applications for the
upmost in reliability. These include voidless glass encapsulation and internal "Category 1"
metallurgical bonds. They can be purchased screened and mil-qualified to MIL-PRF-19500/469,
making them ideal for applications where failure cannot be tolerated. These 10A rectifier bridges
are available in multiple working peak reverse voltage ratings per leg.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Voidless hermetically sealed glass packages used internally for each leg
Electrically isolated aluminum case
Triple-layer passivation
Internal “Category
1”
metallurgical bonds
JANTX and JANTXV qualifications available per MIL-PRF-19500/469
(See
part nomenclature
for all available options)
RoHS compliant versions available without Sn/Pb solder dip
MD Package
APPLICATIONS / BENEFITS
Controlled avalanche characteristics
Working peak reverse voltages 200 to 1,000 volts
Military and other high-reliability applications
High forward surge current capability
Low thermal resistance
Extremely robust construction
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
@ T
A
= 25 ºC unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
Working Peak Reverse Voltage (per leg)
Symbol
T
J
&
T
STG
R
ӨJC
R
ӨJA
V
RWM
Value
-65 to +150
5
25
200
400
600
800
1,000
10
6
100
2800
260
Unit
ºC
ºC/W
ºC/W
V (pk)
483-01
483-02
483-03
483-04
483-05
Maximum Average DC Output Current @ T
C
= +55 ºC
Maximum Average DC Output Current @ T
C
= +100 ºC
Forward Surge Current @ I
O
= I
O1
, T
C
= +55 ºC, tp = 8.3 ms
Isolation Voltage @ 10 µA DC Max for 10 secs @ 25°C
Solder Temperature @ 10 s
I
O1
(2)
I
O2
I
F(surge)
V
ISO
(1)
A
A
A (pk)
V
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Notes:
1. Derate from 10 A at T
C
= +55 ºC to 6 A at T
C
= +100 ºC (88 mA dc/ ºC).
2. Derate from 6 A at T
C
= +100 ºC to 0 A at T
C
= +150 ºC (120 mA dc/ ºC). t
rr
= 2.5 μs at I
F
= 0.5 A, I
R
=
1.0 A, I
rec
= 0.25 A.
RF01149, Rev. A (12/17/13)
©2013 Microsemi Corporation
Ph: 949-380-6100
sales.support@microsemi.com
Page 1 of 6
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