2SA1235 datasheet, PDF - EEWORLD Datasheet

2SA1235: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, PNP, Silicon, SC-59, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size220KB，1 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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2SA1235 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, PNP, Silicon, SC-59, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Mitsubishi
Parts packaging code	SC-59
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	50 V
Configuration	Single
Minimum DC current gain (hFE)	150
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of terminals	3
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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