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TP3032

Description
RF POWER TRANSISTOR NPN SILICON
CategoryDiscrete semiconductor    The transistor   
File Size70KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

TP3032 Overview

RF POWER TRANSISTOR NPN SILICON

TP3032 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, R-CDFM-F6
Reach Compliance Codeunknown
Maximum collector current (IC)4 A
ConfigurationSINGLE
Minimum DC current gain (hFE)15
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F6
Number of components1
Number of terminals6
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment52.5 W
Maximum power dissipation(Abs)52 W
Minimum power gain (Gp)7.5 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TP3032/D
NPN Silicon
RF Power Transistor
The TP3032 is designed for 26 volts, common emitter, 960 MHz base station
amplifiers, for use in analog and digital systems.
Specified 26 Volts, 960 MHz Characteristics
Output Power — 21 Watts
Gain — 7.5 dB min
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
Class AB Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
TP3032
21 W, 960 MHz
RF POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VCER
VCBO
VEBO
IC
PD
Tstg
TJ
Value
40
48
3.5
4
52.5
0.3
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
CASE 319–07, STYLE 2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
Symbol
R
θJC
Max
3.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 30 mA, RBE = 75
Ω)
Emitter–Base Breakdown Voltage
(IE = 5 mAdc)
Collector–Base Breakdown Voltage
(IC = 30 mAdc)
Collector–Emitter Leakage
(VCE = 26 V, RBE = 75
Ω)
V(BR)CER
V(BR)EBO
V(BR)CBO
ICER
40
3.5
48
8
Vdc
Vdc
Vdc
mA
ON CHARACTERISTICS
DC Current Gain
(IC =1 Adc, VCE = 10 Vdc)
hFE
15
80
(continued)
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
REV 6
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
TP3032
1

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