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Datasheet> All Categories > storage> storage> AS4LC8M8S0-75TC
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AS4LC8M8S0-75TC

Description
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
Categorystorage    storage   
File Size392KB，24 Pages
ManufacturerALSC [Alliance Semiconductor Corporation]
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AS4LC8M8S0-75TC Overview

3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM

AS4LC8M8S0-75TC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerALSC [Alliance Semiconductor Corporation]
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts54
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PDSO-G54
length22.22 mm
memory density67108864 bi
Memory IC TypeSYNCHRONOUS DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals54
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
width10.16 mm

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Advance information
®
AS4LC8M8S0
AS4LC4M16S0
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
Features
• PC100/133 compliant
• Organization
- 2,097,152 words × 8 bits × 4 banks (8M×8)
- 1,048,576 words × 16 bits × 4 banks (4M×16)
• Fully synchronous
- All signals referenced to positive edge of clock
• Four internal banks controlled by BA0/BA1 (bank select)
• High speed
- 133/125/100 MHz
- 5.4 ns (133 MHz)/6 ns (125/100 MHz) clock access time
• Low power consumption
- Standby: 7.2 mW max, CMOS I/O
• 4096 refresh cycles, 64 ms refresh interval
• Auto refresh and self refresh
• Automatic and direct precharge
• Burst read, single write operation
• Can assert random column address in every cycle
• LVTTL compatible I/O
• 3.3V power supply
• JEDEC standard package, pinout and function
- 400 mil, 54-pin TSOP II
• Read/write data masking
• Programmable burst length (1/2/4/8/full page)
• Programmable burst sequence (sequential/interleaved)
• Programmable CAS latency (2/3)
Pin arrangement
AS4LC4M16S0
V
CC
DQ0
V
CCQ
NC
DQ1
V
SSQ
NC
DQ2
V
CCQ
NC
DQ3
V
SSQ
NC
V
CC
NC
WE
CAS
RAS
CS
BA0
BA1
A10
A0
A1
A2
A3
V
CC
V
CC
DQ0
V
CCQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
CCQ
DQ5
DQ6
V
SSQ
DQ7
V
CC
LDQM
WE
CAS
RAS
CS
BA0
BA1
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ15
V
SSQ
DQ14
DQ13
V
CCQ
DQ12
DQ11
V
SSQ
DQ10
DQ9
V
CCQ
DQ8
V
SS
NC
UDQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
V
SS
V
SS
DQ7
V
SSQ
NC
DQ6
V
CCQ
NC
DQ5
V
SSQ
NC
DQ4
V
CCQ
NC
V
SS
NC
DQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
V
SS
Pin designation
Pin(s)
DQM (8M×8)
UDQM/LDQM (4M×16)
A0 to A11
BA0, BA1
DQ0 to DQ7 (8M×8)
DQ0 to DQ15 (4M×16)
RAS
CAS
WE
CS
V
CC
, V
CCQ
V
SS
, V
SSQ
CLK
CKE
Description
Output disable/write mask
Address inputs
Bank select inputs
Input/output
Row address strobe
Column address strobe
Write enable
Chip select
Power (3.3V ± 0.3V)
Ground
Clock input
Clock enable
AS4LC4M16S0
Selection guide
Symbol
Bus frequency
Minimum clock access time
Minimum setup time
Minimum hold time
Minimum RAS to CAS delay
Minimum RAS precharge time
Remarks: (CL/t
RCD
/t
RP
)
CL = 2
CL = 3
f
max
t
AC
t
AC
t
S
t
H
t
RCD
t
RP
-75 (PC133)
133
–
5.4
1.5
0.8
3
3
3/3/3
-8
125
–
6
2
1.0
3
3
3/3/3
-10F (PC100)
100
6
–
2
1.0
2
2
2/2/2
-10 (PC100)
100
–
6
2
1.0
3
3
3/3/3
Unit
MHz
ns
ns
ns
ns
cycles
cycles
54-pin TSOP
4LC4M16S0
7/5/00
ALLIANCE SEMICONDUCTOR
1
Copyright ©2000 Alliance Semiconductor. All rights reserved.

AS4LC8M8S0-75TC Related Products

AS4LC8M8S0-75TC AS4LC4M16S0 AS4LC4M16S0-10FTC AS4LC4M16S0-10TC AS4LC4M16S0-75TC AS4LC4M16S0-8TC AS4LC8M8S0 AS4LC8M8S0-10TC AS4LC8M8S0-10FTC AS4LC8M8S0-8TC
Description 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
Is it Rohs certified? incompatible - incompatible incompatible incompatible incompatible - incompatible incompatible incompatible
Maker ALSC [Alliance Semiconductor Corporation] - ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] - ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation]
Parts packaging code TSOP2 - TSOP2 TSOP2 TSOP2 TSOP2 - TSOP2 TSOP2 TSOP2
package instruction TSOP2, - TSOP2, TSOP2, TSOP54,.46,32 TSOP2, TSOP2, TSOP54,.46,32 - TSOP2, TSOP54,.46,32 TSOP2, TSOP2, TSOP54,.46,32
Contacts 54 - 54 54 54 54 - 54 54 54
Reach Compliance Code unknow - unknow unknow unknow unknow - unknow unknow unknow
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99 - EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST - FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST - FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 5.4 ns - 6 ns 6 ns 5.4 ns 6 ns - 6 ns 6 ns 6 ns
Other features AUTO/SELF REFRESH - AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH - AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-PDSO-G54 - R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 - R-PDSO-G54 R-PDSO-G54 R-PDSO-G54
length 22.22 mm - 22.22 mm 22.22 mm 22.22 mm 22.22 mm - 22.22 mm 22.22 mm 22.22 mm
memory density 67108864 bi - 67108864 bi 67108864 bi 67108864 bi 67108864 bi - 67108864 bi 67108864 bi 67108864 bi
Memory IC Type SYNCHRONOUS DRAM - SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM - SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 8 - 16 16 16 16 - 8 8 8
Number of functions 1 - 1 1 1 1 - 1 1 1
Number of ports 1 - 1 1 1 1 - 1 1 1
Number of terminals 54 - 54 54 54 54 - 54 54 54
word count 8388608 words - 4194304 words 4194304 words 4194304 words 4194304 words - 8388608 words 8388608 words 8388608 words
character code 8000000 - 4000000 4000000 4000000 4000000 - 8000000 8000000 8000000
Operating mode SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C - 70 °C 70 °C 70 °C 70 °C - 70 °C 70 °C 70 °C
organize 8MX8 - 4MX16 4MX16 4MX16 4MX16 - 8MX8 8MX8 8MX8
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 - TSOP2 TSOP2 TSOP2 TSOP2 - TSOP2 TSOP2 TSOP2
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE - SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE - SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm - 1.2 mm 1.2 mm 1.2 mm 1.2 mm - 1.2 mm 1.2 mm 1.2 mm
self refresh YES - YES YES YES YES - YES YES YES
Maximum supply voltage (Vsup) 3.6 V - 3.6 V 3.6 V 3.6 V 3.6 V - 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V - 3 V 3 V 3 V 3 V - 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V - 3.3 V 3.3 V 3.3 V 3.3 V - 3.3 V 3.3 V 3.3 V
surface mount YES - YES YES YES YES - YES YES YES
technology CMOS - CMOS CMOS CMOS CMOS - CMOS CMOS CMOS
Temperature level COMMERCIAL - COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL - COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form GULL WING - GULL WING GULL WING GULL WING GULL WING - GULL WING GULL WING GULL WING
Terminal pitch 0.8 mm - 0.8 mm 0.8 mm 0.8 mm 0.8 mm - 0.8 mm 0.8 mm 0.8 mm
Terminal location DUAL - DUAL DUAL DUAL DUAL - DUAL DUAL DUAL
width 10.16 mm - 10.16 mm 10.16 mm 10.16 mm 10.16 mm - 10.16 mm 10.16 mm 10.16 mm

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