KMB12F
thru
KMB110F
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
V
F
T
j
max.
●
●
●
●
●
●
●
VOLTAGE - 20 TO 100 VOLTS
CURRENT - 1.0 AMPERES
1.0 A
20 V to 100 V
30 A
°
0.50 V, 0.55V,0.70 V, 0.85V
125 C
FEATURES
Low profile package
Ideal for automated placement
Ultrafast reverse recovery time
Low power losses, high efficiency
Low forward voltage drop
High surge capability
High temperature soldering：
260℃/10 seconds at terminals
●
MECHANICAL DATA
●
Case:
MBF molded plastic body over
Schottky barrier chips
●
●
Polarity:
Polarity symbols marked on body
MAXIMUM RATIXGS AND ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C
unless otherwise noted)
Symbol
KMB12F KMB14F KMB16F KMB18F KMB110F UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.2×0.2"(5.0×5.0mm)copper pad area
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forwad voltage at 1.0A
Maximum DC reverse current
T
A
= 25
℃
at Rated DC blocking voltage
T
A
= 100℃
Typical Junction Capacitance at 4.0V,1.0MHz
Typical Thermal resistance (Note1)
Operating junction temperature range
Storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
R
θJA
R
θJL
T
J
T
STG
20
14
20
40
28
40
60
42
60
1.0
30
80
56
80
100
70
100
V
V
V
A
A
0.50
0.55
0.70
0.5
20
0.85
V
mA
250
85
20
–55
to +125
–
55 to +150
125
pF
℃/
W
℃
℃
Note：1.Thermal resistance from junction to ambient and from junction to lead P.C.B.mounted on 0.2×0.2"(5.0×5.0mm)copper pad areas.
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WWW.PS-PFS.COM
Microcontroller MCU
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