DRD710G50
Rectifier Diode
DS5980 – 1 January 2011(LN28001)
KEY PARAMETERS
FEATURES
Double Side Cooling
High Surge Capability
V
RRM
I
F(AV)
I
FSM
5000V
710A
11500A
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
RRM
V
5000
4800
4600
Conditions
DRD710G50
DRD710G48
DRD710G46
V
RSM
= V
RRM
+100V
Outline type code: G
(See Package Details for further information)
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DRD710G46
for a 4600V device
1/7
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DRD710G50
CURRENT RATINGS
T
case
= 75°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
910
1430
1314
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
599
941
814
A
A
A
T
case
= 100°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
710
1115
1000
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
450
706
570
A
A
A
2/7
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DRD710G50
-3-
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
Surge (non-repetitive) on-state current
I t for fusing
2
2
Test Conditions
10ms half sine, T
case
= 150°C
V
R
= 50% V
RRM
- ¼ sine
10ms half sine, T
case
= 150°C
V
R
= 0
Max.
9.2
0.422
11.5
0.66
Units
kA
MA s
kA
MA s
2
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 12kN
(with mounting compound)
T
vj
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
T
stg
F
m
Storage temperature range
Clamping force
Double side
Single side
Min.
-
-
-
-
-
-
-
-55
11.5
Max.
0.032
0.064
0.064
0.008
0.016
160
150
175
13.5
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
°C
kN
3/7
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DRD710G50
CHARACTERISTICS
Symbol
V
FM
I
RM
Q
S
I
rr
V
TO
r
T
Parameter
Forward voltage
Peak reverse current
Total stored charge
Peak reverse recovery current
Threshold voltage
Slope resistance
Test Conditions
At 1800A peak, T
case
= 25°C
At V
RRM,
T
case
= 150°C
I
F
= 1000A, dI
RR
/dt =3A/µs
T
case
= 150°C, V
R
=100V
At T
vj
= 150°C
At T
vj
= 150°C
Min.
-
-
-
-
-
-
Max.
1.8
50
2600
80
0.88
0.687
Units
V
mA
µC
A
V
m
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dissipation curves
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.I
T
Where
A = 1.183601
B = -0.13593
C = 0.000384
D = 0.030400
these values are valid for T
j
= 150°C for I
F
100A to 2500A
4/7
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DRD710G50
-5-
Fig.4 Total stored charge
Fig.5 Maximum reverse recovery current
Fig.6 Surge (non-repetitive) forward current vs time
(with 50% V
RRM
at T
case
150°C)
Fig.7 Maximum (limit) transient thermal impedance-
junction to case
5/7
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