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2SJ305(TE85L,F)

Description
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,200MA I(D),SC-59
CategoryDiscrete semiconductor    The transistor   
File Size322KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

2SJ305(TE85L,F) Overview

TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,200MA I(D),SC-59

2SJ305(TE85L,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)0.2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.2 W
surface mountYES
Base Number Matches1
2SJ305
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ305
High Speed Switching Applications
Analog Applications
High input impedance
Low gate threshold voltage.: V
th
=
−0.5~−1.5
V
Excellent switching times.: t
on
= 0.06
μs
(typ.)
t
off
= 0.15
μs
(typ.)
Low drain-source ON resistance: R
DS (ON)
= 2.4
(typ.)
Small package.
Complementary to 2SK2009
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
GSS
I
D
P
D
T
ch
T
stg
Rating
−30
±20
−200
200
150
−55~150
Unit
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
Marking
Equivalent Circuit
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