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2N3906-D29Z

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size89KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

2N3906-D29Z Overview

Transistor

2N3906-D29Z Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.2 A
ConfigurationSingle
Minimum DC current gain (hFE)100
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.35 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)250 MHz
Base Number Matches1
2N3906 / MMBT3906 / PZT3906
2N3906
MMBT3906
C
PZT3906
C
E
C
B
E
C
TO-92
E
SOT-23
Mark: 2A
B
SOT-223
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10
µA
to 100 mA.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A
= 25°C unless otherwise noted
Parameter
Value
40
40
5.0
200
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
T
A
= 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N3906
625
5.0
83.3
200
Max
*MMBT3906
350
2.8
357
**PZT3906
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
2001 Fairchild Semiconductor Corporation
2N3906/MMBT3906/PZT3906, Rev A

2N3906-D29Z Related Products

2N3906-D29Z 2N3906-D27ZS00Z 2N3906-D28Z
Description Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A
Configuration Single Single Single
Minimum DC current gain (hFE) 100 100 100
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 0.35 W 0.35 W 0.35 W
surface mount NO NO NO
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz
Base Number Matches 1 1 1
Is it Rohs certified? incompatible - incompatible
JESD-609 code e0 - e0
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
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