INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC4806
DESCRIPTION
·High
Breakdown Voltage-
: V
CBO
= 1700V(Min)
·High
Switching Speed
·Low
Saturation Voltage
APPLICATIONS
·Horizontal
deflection output for high resolution display.
·High
speed switching power supply output applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
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VALUE
UNIT
1700
V
600
V
5
V
5
A
10
A
2.5
A
50
W
I
CM
Collector Current-Peak
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC4806
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 5mA; I
B
= 0
B
600
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 3.5A; I
B
= 1A
5.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 3.5A; I
B
= 1A
1.5
V
I
CBO
Collector Cutoff Current
V
CB
= 1700V; I
E
= 0
1.0
mA
I
EBO
Emitter Cutoff Current
V
EB
= 5V; I
C
= 0
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
f
T
Current-Gain—Bandwidth Product
C
OB
Output Capacitance
Switching Times; Resistive Load
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I
C
= 1A; V
CE
= 5V
I
C
= 3.5A; V
CE
= 5V
I
C
= 0.1A; V
CE
= 10V
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3.5
3
240
10
μA
7.5
MHz
I
E
= 0; V
CB
= 10V; f
test
= 1.0MHz
pF
t
stg
Storage Time
I
C
= 3.5A; I
B1
= 0.7A; I
B2
= -1.4A;
R
L
= 56Ω
3.0
μs
t
f
Fall Time
0.2
μs
isc Website：www.iscsemi.cn
2
Analogue and Mixed Signal
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