MCP6401/1R/1U/2/4
1 MHz, 45 µA Op Amps
Features
•
•
•
•
•
•
•
Low Quiescent Current: 45 µA (typical)
Gain Bandwidth Product: 1 MHz (typical)
Rail-to-Rail Input and Output
Supply Voltage Range: 1.8V to 6.0V
Unity Gain Stable
Extended Temperature Range: -40°C to +125°C
No Phase Reversal
Description
The Microchip Technology Inc. MCP6401/1R/1U/2/4
family of operational amplifiers (op amps) has low
quiescent current (45 µA, typical) and rail-to-rail input
and output operation. This family is unity gain stable
and has a gain bandwidth product of 1 MHz (typical).
These devices operate with a single supply voltage as
low as 1.8V. These features make the family of op
amps well suited for single-supply, battery-powered
applications.
The MCP6401/1R/1U/2/4 family is designed with
Microchip’s advanced CMOS process and offered in
single packages. All devices are available in the
extended temperature range, with a power supply
range of 1.8V to 6.0V.
Applications
•
•
•
•
•
•
•
Portable Equipment
Battery Powered System
Medical Instrumentation
Data Acquisition Equipment
Sensor Conditioning
Supply Current Sensing
Analog Active Filters
Package Types
MCP6401
SC70-5, SOT-23-5
V
OUT
1
V
SS
2
V
IN
+
3
Design Aids
•
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
Mindi
™
Circuit Designer and Simulator
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
MCP6401R
SOT-23-5
V
OUT
1
V
DD
2
V
IN
+
3
5
V
DD
4
V
IN
–
5
V
SS
4
V
IN
–
MCP6402
SOIC
V
OUTA
1
V
INA
– 2
V
INA
+ 3
8 V
DD
7 V
OUTB
6 V
INB
–
5 V
INB
+
MCP6401U
SOT-23-5
V
IN
+
1
V
SS
2
V
IN
–
3
Typical Application
R
2
D
2
V
IN
R
1
V
OUT
MCP6401
D
1
5
V
DD
4
V
OUT
V
SS
4
MCP6402
2x3 TDFN
V
OUTA
1
V
INA
–
2
V
INA
+
3
V
SS
4
MCP6404
SOIC, TSSOP
8
V
DD
V
OUTA
1
14 V
OUTD
13 V
IND
–
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
–
8 V
OUTC
–
7
V
OUTB
V
INA
2
EP
9
6
V
INB
–
5
V
INB
+
V
INA
+ 3
V
DD
4
V
INB
+ 5
Precision Half-Wave Rectifier
V
INB
– 6
V
OUTB
7
©
2010 Microchip Technology Inc.
DS22229B-page 1
MCP6401/1R/1U/2/4
NOTES:
DS22229B-page 2
©
2010 Microchip Technology Inc.
MCP6401/1R/1U/2/4
1.0
1.1
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
††
See
Section 4.1.2 “Input Voltage Limits”
V
DD
– V
SS
........................................................................7.0V
Current at Input Pins .....................................................±2 mA
Analog Inputs (V
IN
+
, V
IN
-
)†† .......... V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs ......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short-Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature (T
J
) .......................... +150°C
ESD Protection on All Pins (HBM; MM)
............... ≥
4 kV; 300V
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.8V to +6.0V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
» V
DD
/2, V
L
= V
DD
/2 and R
L
= 100 kΩ to V
L
. (Refer to
Figure 1-1).
Parameters
Input Offset
Input Offset Voltage
Input Offset Drift with Temperature
Power Supply Rejection Ratio
Input Bias Current and Impedance
Input Bias Current
I
B
—
—
—
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Voltage Range
Common Mode Rejection Ratio
V
CMR
CMRR
V
SS
-0.2
V
SS
-0.3
56
63
Open-Loop Gain
DC Open-Loop Gain
(Large Signal)
Output
Maximum Output Voltage Swing
Output Short-Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note 1:
V
DD
I
Q
1.8
20
—
45
6.0
70
V
µA
I
O
= 0, V
DD
= 5.0V
V
CM
= 0.2V
DD
V
OL,
V
OH
I
SC
V
SS
+20
—
—
—
±5
±15
V
DD
–20
—
—
mV
mA
mA
V
DD
= 6.0V, R
L
= 10 kΩ
0.5V input overdrive
V
DD
= 1.8V
V
DD
= 6.0V
A
OL
90
110
—
dB
V
OUT
= 0.3V to V
DD
-0.3V
V
CM
= V
SS
—
—
71
78
V
DD
+0.2
V
DD
+0.3
—
—
V
V
dB
dB
V
DD
= 1.8V,
Note 1
V
DD
= 6.0V,
Note 1
V
CM
= -0.2V to 2.0V,
V
DD
= 1.8V
V
CM
= -0.3V to 6.3V,
V
DD
= 6.0V
I
OS
Z
CM
Z
DIFF
—
—
—
±1.0
30
800
±1.0
10
13
||6
10 ||6
13
Sym
Min
Typ
Max
Units
Conditions
V
OS
ΔV
OS
/ΔT
A
PSRR
-4.5
—
63
—
±2.0
78
+4.5
—
—
100
—
—
—
—
—
mV
V
CM
= V
SS
µV/°C T
A
= -40°C to +125°C,
V
CM
= V
SS
dB
pA
pA
pA
pA
Ω||pF
Ω||pF
T
A
= +85°C
T
A
= +125°C
V
CM
= V
SS
Figure 2-11
shows how V
CMR
changes across temperature.
©
2010 Microchip Technology Inc.
DS22229B-page 3
MCP6401/1R/1U/2/4
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8 to +6.0V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, R
L
= 100 kΩ to V
L
and C
L
= 60 pF. (Refer to
Figure 1-1).
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
e
ni
i
ni
—
—
—
3.6
28
0.6
—
—
—
µVp-p
nV/√Hz
fA/√Hz
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
GBWP
PM
SR
—
—
—
1
65
0.5
—
—
—
MHz
°
V/µs
G = +1 V/V
Sym
Min
Typ
Max
Units
Conditions
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.8V to +6.0V and V
SS
= GND.
Parameters
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SC70
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-2x3 TDFN
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
—
—
331
220.7
149.5
41
95.3
100
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
-40
-65
—
—
+125
+150
°C
°C
Note 1
Sym
Min
Typ
Max
Units
Conditions
Note 1:
The internal junction temperature (T
J
) must not exceed the absolute maximum specification of +150°C.
1.2
Test Circuits
C
F
6.8 pF
R
G
100 kΩ
V
P
V
IN+
MCP640x
V
IN–
V
M
R
G
100 kΩ
(V/V)
(V)
(mV)
C
F
6.8 pF
V
L
R
F
100 kΩ
R
L
100 kΩ
V
OUT
C
L
60 pF
C
B1
100 nF
R
F
100 kΩ
V
DD
V
DD
/2
The circuit used for most DC and AC tests is shown in
Figure 1-1.
This circuit can independently set V
CM
and
V
OUT
; see
Equation 1-1.
Note that V
CM
is not the
circuit’s Common Mode voltage ((V
P
+ V
M
)/2), and that
V
OST
includes V
OS
plus the effects (on the input offset
error, V
OST
) of temperature, CMRR, PSRR and A
OL
.
EQUATION 1-1:
V
CM
=
(
V
P
+ V
DD
⁄
2
)
⁄
2
V
OST
= V
IN–
–
V
IN+
Where:
G
DM
= Differential Mode Gain
V
CM
= Op Amp’s Common Mode
Input Voltage
V
OST
= Op Amp’s Total Input Offset
Voltage
V
OUT
=
(
V
DD
⁄
2
)
+
(
V
P
–
V
M
)
+ V
OST
(
1 + G
DM
)
G
DM
= R
F
⁄
R
G
C
B2
1 µF
FIGURE 1-1:
AC and DC Test Circuit for
Most Specifications.
©
2010 Microchip Technology Inc.
DS22229B-page 4
MCP6401/1R/1U/2/4
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +6.0V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
V
L
= V
DD
/2, R
L
= 100 kΩ to V
L
and C
L
= 60 pF.
24%
Percentage of Occurences
Input Offset Voltage (µV)
1200
1000
800
600
400
200
0
-200
-400
-600
-800
-1000
-0.5
21%
18%
15%
12%
9%
6%
3%
0%
-5
1760 Samples
V
CM
= V
SS
V
DD
= 1.8V
Representative Part
T
A
=
T
A
=
T
A
=
T
A
=
+125°C
+85°C
+25°C
-40°C
0.5
-0.3
-4
-3
-2 -1 0
1
2
3
Input Offset Voltage (mV)
4
5
FIGURE 2-1:
Input Offset Voltage.
FIGURE 2-4:
Input Offset Voltage vs.
Common Mode Input Voltage with V
DD
= 1.8V.
1000
Input Offset Voltage (µV)
45%
Percentage of Occurences
40%
35%
30%
25%
20%
15%
10%
5%
0%
-10 -8
-6 -4 -2 0 2 4 6 8
Input Offset Voltage Drift (µV/°C)
10
1760 Samples
V
CM
= V
SS
T
A
= -40°C to +125°C
750
500
250
0
-250
-500
-750
-1000
1.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Output Voltage (V)
6.0
0.0
0.5
1.5
Representative Part
V
DD
= 1.8V
V
DD
= 6.0V
FIGURE 2-2:
Input Offset Voltage Drift.
FIGURE 2-5:
Output Voltage.
1000
Input Offset Voltage (µV)
-0.1
Common Mode Input Voltage (V)
Input Offset Voltage vs.
1000
900
800
700
600
500
400
300
200
100
0
-100
-0.5
Input Offset Voltage (µV)
V
DD
= 6.0V
Representative Part
800
600
400
200
0
-200
-400
-600
-800
T
A
T
A
T
A
T
A
= +125°C
= +85°C
= +25°C
= -40°C
Representative Part
T
A
=
T
A
=
T
A
=
T
A
=
+125°C
+85°C
+25°C
-40°C
6.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Common Mode Input Voltage (V)
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
Power Supply Voltage (V)
FIGURE 2-3:
Input Offset Voltage vs.
Common Mode Input Voltage with V
DD
= 6.0V.
FIGURE 2-6:
Input Offset Voltage vs.
Power Supply Voltage.
©
2010 Microchip Technology Inc.
DS22229B-page 5
2.3
0.7
1.5
1.7
0.9
1.1
1.3
1.9
2.1
0.1
0.3
京公网安备 11010802033920号
EEWORLD
