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1N5392G-F

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size834KB,5 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Download Datasheet Parametric View All

1N5392G-F Overview

Rectifier Diode,

1N5392G-F Parametric

Parameter NameAttribute value
MakerRectron Semiconductor
package instructionO-PALF-W2
Reach Compliance Codecompliant
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formLONG FORM
Maximum repetitive peak reverse voltage100 V
Maximum reverse current5 µA
Reverse test voltage100 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
1N5391G
THRU
GLASS PASSIVATED RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes
FEATURES
1N5399G
*
*
*
*
*
Low cost
Low leakage
Low forward voltage drop
High current capability
Glass passivated junction
*
*
*
*
*
MECHANICAL DATA
Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.38 gram
1.0 (25.4)
MIN.
.034 (0.9)
DIA.
.028 (0.7)
.300 (7.6)
.230 (5.8)
.140 (3.6)
DIA.
.104 (2.6)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
.375” (9.5mm) lead length at T
L
= 70 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
SYMBOL 1N5391G 1N5392G 1N5393G 1N5394G 1N5395G 1N5396G 1N5397G 1N5398G 1N5399G UNITS
V
RRM
V
RMS
V
DC
I
O
I
FSM
I
2
T
C
J
R
JA
T
J
, T
STG
o
o
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
1.5
50
10.37
20
50
-65 to + 175
500
350
500
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
2
AS
Typical Current Squared Time
TypicalJunctionCapacitance(Note)
Typical ThermalResistance
Operating and Storage Temperature Range
pF
0
C/ W
0
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.5A DC
o
Maximum DC Reverse Current @T
A
= 25 C
at Rated DC Blocking Voltage
@T
A
= 150
o
C
Maximum Full Load Reverse Current Average, Full Cycle
.375” (9.5mm) lead length at T
L
= 75
o
C
SYMBOL
1N5391G 1N5392G 1N5393G 1N5394G 1N5395G 1N5396G 1N5397G 1N5398G 1N5399G
1.1
V
F
5.0
5.0
I
R
30
UNITS
Volts
uAmps
mAmps
uAmps
NOTES : Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
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