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NX8571SA326-BA

Description
LASER DIODE W/MONITOR,1.533UM PEAK WAVELENGTH,MODULE-BF
CategoryLED optoelectronic/LED    photoelectric   
File Size70KB,12 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

NX8571SA326-BA Overview

LASER DIODE W/MONITOR,1.533UM PEAK WAVELENGTH,MODULE-BF

NX8571SA326-BA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Reach Compliance Codeunknown
Maximum forward current0.01 A
Maximum forward voltage2.5 V
Maximum operating temperature70 °C
Minimum operating temperature-20 °C
Optoelectronic device typesLASER DIODE
peak wavelength1533 nm
Semiconductor materialInGaAsP
PRELIMINARY DATA SHEET
LASER DIODE
NX8571SA
1 550 nm CW LIGHT SOURCE
InGaAsP MQW-DFB LASER DIODE MODULE
WITH WAVELENGTH MONITOR
DESCRIPTION
The NX8571SA is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode
module with wavelength monitor function.
This device is designed as CW light source and ideal for transmission systems in which external modulators are
used.
FEATURES
• Wavelength monitor function (Etalon Filter, Wavelength monitor PD)
• Output power
P
f
= 10 mW MIN.
• Available for DWDM wavelengths based on ITU-T recommendations
(100 GHz grid, refer to ORDERING INFORMATION)
• Internal thermo-electric cooler and isolator
• Hermetically sealed 14-pin butterfly package
• Polarization maintain fiber pigtail
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15536EJ1V0DS00 (1st edition)
Date Published May 2001 NS CP(K)
Printed in Japan
©
2001

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