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J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
J210
J211
J212
MMBFJ210
MMBFJ211
MMBFJ212
G
S
G
S
TO-92
D
SOT-23
Mark: 62V / 62W / 62X
D
NOTE: Source & Drain
are interchangeable
N-Channel RF Amplifier
This device is designed for HF/VHF mixer/amplifier and
applications where Process 50 is not adequate. Sufficient
gain and low noise for sensitive receivers. Sourced from
Process 90.
Absolute Maximum Ratings*
Symbol
V
DG
V
GS
I
GF
T
J
,T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
25
- 25
10
-55 to +150
Units
V
V
mA
°C
Operating and Storage Junction Temperature Range
5
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
J210-212
350
2.8
125
357
Max
*MMBFJ210-212
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997
Fairchild Semiconductor Corporation
J210/J211/J212/MMBFJ210/J211/J212, Rev A
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
N-Channel RF Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)GSS
I
G S S
V
GS(off)
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
I
G
= 1.0
µA,
V
DS
= 0
V
G S
= 15 V, V
D S
= 0
V
D S
= 15 V, I
D
= 1.0 nA
210
211
212
- 25
- 100
-1.0
- 2.5
- 4.0
-3.0
- 4.5
- 6.0
V
pA
V
V
V
ON CHARACTERISTICS
I
D S S
Zero-Gate Voltage Drain Current*
V
DS
= 15 V, V
GS
= 0
210
211
212
2.0
7.0
15
15
20
40
mA
mA
mA
SMALL SIGNAL CHARACTERISTICS
g
fs
Common Source Forward
Transconductance
V
D S
= 15 V, V
G S
= 0, f = 1.0 kHz
210
211
212
V
D S
= 15 V, V
G S
= 0, f = 1.0 kHz
4000
6000
7000
12,000
12,000
12,000
200
µmhos
µmhos
µmhos
µmhos
g
oss
Common Source Output
Conductance
*
Pulse Test: Pulse Width
≤
300
µS
Typical Characteristics
Parameter Interactions
Common Drain-Source
MEMS sensors
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