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Z0103MN, Z0107MN,
Z0109MN
Sensitive Gate Triac Series
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
other light industrial or consumer applications. Supplied in surface
mount package for use in automated manufacturing.
Features
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•
•
•
•
•
Sensitive Gate Trigger Current in Four Trigger Modes
Blocking Voltage to 600 V
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
These are Pb−Free Devices
TRIAC
1.0 AMPERE RMS
600 VOLTS
MT2
G
MT1
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(Sine Wave, 50 to 60 Hz, Gate Open,
T
J
=
−40
to +125°C)
On−State Current RMS (T
C
= 80°C)
(Full Sine Wave 50 to 60 Hz)
Peak Non−repetitive Surge Current (One Full
Cycle Sine Wave, 60 Hz, T
C
= 25°C)
Circuit Fusing Considerations
(Pulse Width = 8.3 ms)
Average Gate Power (T
C
= 80°C, t
v
8.3 ms)
Peak Gate Current (t
v
20
ms,
T
J
= +125°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
I
T(RMS)
I
TSM
I
2
t
P
G(AV)
I
GM
T
J
T
stg
Value
600
Unit
V
SOT−223
CASE 318E
STYLE 11
1
A
Y
W
10XMN
MARKING
DIAGRAM
4
AYW
10XMN
G
G
2
3
1.0
8.0
0.4
1.0
1.0
−40
to
+125
−40
to
+150
A
A
A
2
s
W
A
°C
= Assembly Location
= Year
= Work Week
= Device Code
x = 3, 7, 9
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
°C
1
2
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient PCB
Mounted per Figure 1
Thermal Resistance, Junction−to−Tab Meas-
ured on MT2 Tab Adjacent to Epoxy
Maximum Device Temperature for
Soldering Purposes for 10 Secs Maximum
Symbol
R
qJA
R
qJT
T
L
Max
156
25
260
Unit
°C/W
°C/W
°C
ORDERING INFORMATION
Device
Z0103MNT1G
Z0107MNT1G
Z0109MNT1G
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
†
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
June, 2009
−
Rev. 3
1
Publication Order Number:
Z0103MN/D
Z0103MN, Z0107MN, Z0109MN
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
T
J
= 25°C
T
J
= +125°C
I
DRM
, I
RRM
−
−
−
−
5.0
500
mA
mA
ON CHARACTERISTICS
Peak On−State Voltage
(I
TM
=
"1.4
A Peak; Pulse Width
v
2.0 ms, Duty Cycle
v
2.0%)
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc, R
L
= 30 Ohms)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc, R
L
= 30 Ohms)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc, R
L
= 30 Ohms)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Latching Current (V
D
= 12 V, I
G
= 1.2 x I
GT
)
MT2(+), G(+) All Types
MT2(+), G(−) All Types
MT2(−), G(−) All Types
MT2(−), G(+) All Types
Latching Current (V
D
= 12 V, I
G
= 1.2 x I
GT
)
MT2(+), G(+) All Types
MT2(+), G(−) All Types
MT2(−), G(−) All Types
MT2(−), G(+) All Types
Latching Current (V
D
= 12 V, I
G
= 1.2 x I
GT
)
MT2(+), G(+) All Types
MT2(+), G(−) All Types
MT2(−), G(−) All Types
MT2(−), G(+) All Types
Gate Trigger Voltage (Continuous dc) (V
D
= 12 Vdc, R
L
= 30 Ohms)
Gate Non−Trigger Voltage (V
D
= 12 V, R
L
= 30 Ohms, T
J
= 125°C)
All Four Quadrants
Holding Current
(V
D
= 12 Vdc, Initiating Current = 50 mA, Gate Open)
(Z0103MA)
(Z0107MA, Z0109MA)
Z0103MN
V
TM
I
GT
0.15
0.15
0.15
0.25
Z0107MN
I
GT
0.15
0.15
0.15
0.25
Z0109MN
I
GT
0.15
0.15
0.15
0.25
Z0103MN
I
L
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
10
10
10
10
mA
7.0
15
7.0
7.0
mA
10
20
10
10
mA
15
25
15
15
1.3
−
7.0
10
V
V
mA
−
−
−
−
5.0
5.0
5.0
7.0
mA
−
−
−
−
3.0
3.0
3.0
5.0
mA
−
−
1.56
V
mA
Z0107MN
I
L
Z0109MN
I
L
V
GT
V
GD
I
H
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(V
D
= 400 V, I
TM
= 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open,
T
J
= 110°C, f = 250 Hz, with Snubber)
Critical Rate of Rise of Off−State Voltage (V
D
= 67% Rated V
DRM
, Exponential
Waveform, Gate Open, T
J
= 110°C)
Z0103MN
Z0107MN
Z0109MN
Repetitive Critical Rate of Rise of On−State Current, T
J
= 125°C
Pulse Width = 20
ms,
IPKmax = 15 A, diG/dt = 1 A/ms, f = 60 Hz
di/dt(c)
1.6
−
−
A/ms
dv/dt
10
20
50
di/dt
−
30
60
75
−
−
−
−
20
V/ms
A/ms
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2
Z0103MN, Z0107MN, Z0109MN
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2
−
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
Quadrant IV
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
Z0103MN, Z0107MN, Z0109MN
0.15
3.8
0.079
2.0
0.091
2.3
0.079
2.0
0.059
1.5
0.059
1.5
0.059
1.5
inches
mm
0.091
2.3
0.244
6.2
0.984
25.0
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.
BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
MATERIAL: G10 FIBERGLASS BASE EPOXY
0.096
2.44
0.059
1.5
0.096
2.44
0.059
1.5
0.096
2.44
0.472
12.0
Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223
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4
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