2N7278R datasheet, PDF - EEWORLD Datasheet

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2N7278R: Description4A, 250V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF; CategoryDiscrete semiconductor The transistor; File Size99KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2N7278R Overview

4A, 250V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

2N7278R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	RADIATION HARDENED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (Abs) (ID)	4 A
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	0.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	25 W
Maximum power dissipation(Abs)	25 W
Maximum pulsed drain current (IDM)	12 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Maximum off time (toff)	270 ns
Maximum opening time (tons)	120 ns
Base Number Matches	1

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2N7278R Related Products

	2N7278R	2N7278H	2N7278D
Description	4A, 250V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF	4A, 250V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF	4A, 250V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Other features	RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V	250 V	250 V
Maximum drain current (ID)	4 A	4 A	4 A
Maximum drain-source on-resistance	0.7 Ω	0.7 Ω	0.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF	TO-205AF	TO-205AF
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	25 W	25 W	25 W
Maximum pulsed drain current (IDM)	12 A	12 A	12 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON
Maximum off time (toff)	270 ns	270 ns	270 ns
Maximum opening time (tons)	120 ns	120 ns	120 ns
Is it Rohs certified?	incompatible	incompatible	-
Maximum drain current (Abs) (ID)	4 A	4 A	-
JESD-609 code	e0	e0	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-
Maximum power dissipation(Abs)	25 W	25 W	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-
Base Number Matches	1	1	-

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