2N7143E3 datasheet, PDF - EEWORLD Datasheet

2N7143E3: DescriptionPower Bipolar Transistor, 12A I(C), 80V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2; CategoryDiscrete semiconductor The transistor; File Size60KB，1 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N7143E3 Overview

Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

Parameter Name	Attribute value
package instruction	METAL CAN-2
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	12 A
Collector-emitter maximum voltage	80 V
Minimum DC current gain (hFE)	60
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON
Base Number Matches	1

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