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TN6727A

Description
PNP General Purpose Amplifier
CategoryDiscrete semiconductor    The transistor   
File Size281KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

TN6727A Overview

PNP General Purpose Amplifier

TN6727A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-226
JESD-30 codeO-PBCY-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
TN6727A
TN6727A
CB
E
TO-226
PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to
1A. Sourced from Process 77. See TN6726A for characteristics.
Absolute Maximum Ratings*
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J,
T
stg
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A = 25°C unless otherwise noted
Value
40
50
5
1.5
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
T
A = 25°C unless otherwise noted
Max
Characteristic
TN6727A
P
D
R
θJC
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1
8
50
125
W
mW/°C
°C/W
°C/W
Units
©
1997 Fairchild Semiconductor Corporation
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