TN6718A
TN6718A
CB
E
TO-226
NPN General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents
to 1.0A. Sourced from Process 39. See TN6717A for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
stg
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A = 25°C unless otherwise noted
Value
100
100
5
1.2
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
T
A = 25°C unless otherwise noted
Max
Characteristic
TN6718A
P
D
R
θJC
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1
8
50
125
W
mW/°C
°C/W
°C/W
Units
©
1997 Fairchild Semiconductor
tn6718a.lwp Rev A
TN6718A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
T
A = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 10 mA
I
C
= 100
µA
I
E
= 100
µA
V
CB
=80 V
V
EB
= 5 V
100
100
5
100
10
V
V
V
nA
uA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 50 mA, V
CE
= 1 V
I
C
= 250 mA, V
CE
= 1 V
I
C
= 500 mA, V
CE
= 1 V
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 250 mA, I
B
= 10 mA
I
C
= 250 mA, I
B
= 25 mA
V
BE(on)
Base-Emitter On Voltage
I
C
= 250 mA, V
CE
= 1 V
80
50
20
0.5
0.35
1.2
V
250
-
V
SMALL SIGNAL CHARACTERISTICS
C
cb
h
fe
Output Capacitance
Small Signal Current Gain
V
CB
= 10 V, I
E
= 0, f = 1MHz
I
C
= 200 mA, V
CE
= 5 V, f=20MHz
2.5
30
25
pF
-
*Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
1.0%
©
1997 Fairchild Semiconductor
tn6718a.lwp Rev A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E
2
CMOS
TM
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
HiSeC™
DISCLAIMER
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MICROWIRE™
POP™
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QS™
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SuperSOT™-8
TinyLogic™
UHC™
VCX™
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As used herein:
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2. A critical component is any component of a life
support device or system whose failure to perform can
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be reasonably expected to cause the failure of the life
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support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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