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TN28F020-90

Description
28F020 2048K (256K X 8) CMOS FLASH MEMORY
Categorystorage    storage   
File Size865KB,38 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Download Datasheet Parametric View All

TN28F020-90 Overview

28F020 2048K (256K X 8) CMOS FLASH MEMORY

TN28F020-90 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIntel
Parts packaging codeQFJ
package instruction0.450 X 0.550 INCH, PLASTIC, LCC-32
Contacts32
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time90 ns
Other features100000 ERASE/PROGRAM CYCLES
command user interfaceYES
Data pollingNO
Durability100000 Write/Erase Cycles
JESD-30 codeR-PQCC-J32
JESD-609 codee0
length13.97 mm
memory density2097152 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals32
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage12 V
Certification statusNot Qualified
Maximum seat height3.56 mm
Maximum standby current0.0001 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width11.43 mm
E
n
n
n
n
n
n
n
12.0 V ±5% V
PP
28F020 2048K (256K X 8) CMOS
FLASH MEMORY
n
n
n
n
Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
Noise Immunity Features
±10% V
CC
Tolerance
Maximum Latch-Up Immunity
through EPI Processing
ETOX™ Nonvolatile Flash Technology
EPROM-Compatible Process Base
High-Volume Manufacturing
Experience
JEDEC-Standard Pinouts
32-Pin Plastic Dip
32-Lead PLCC
32-Lead TSOP
(See Packaging Spec., Order #231369)
Flash Electrical Chip-Erase
2 Second Typical Chip-Erase
Quick-Pulse Programming Algorithm
10 µS Typical Byte-Program
4 second Chip-Program
100,000 Erase/Program Cycles
High-Performance Read
90 ns Maximum Access Time
CMOS Low Power Consumption
10 mA Typical Active Current
50 µA Typical Standby Current
0 Watts Data Retention Power
Integrated Program/Erase Stop Timer
n
Extended Temperature Options
Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write
random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-
board during subassembly test; in-system during final test; and in-system after sale. The 28F020 increases
memory flexibility, while contributing to time and cost savings.
The 28F020 is a 2048-kilobit nonvolatile memory organized as 262,144 bytes of eight bits. Intel’s 28F020 is
offered in 32-pin plastic DIP, 32-lead PLCC, and 32-lead TSOP packages. Pin assignments conform to
JEDEC standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel’s ETOX™ (EPROM Tunnel Oxide)
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V V
PP
supply, the
28F020 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse
programming and quick-erase algorithms.
Intel’s 28F020 employs advanced CMOS circuitry for systems requiring high-performance access speeds,
low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance
for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates
into power savings when the device is deselected. Finally, the highest degree of latch-up protection is
achieved through Intel’s unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA
on address and data pins, from –1 V to V
CC
+ 1 V.
With Intel’s ETOX process technology base, the 28F020 builds on years of EPROM experience to yield the
highest levels of quality, reliability, and cost-effectiveness.
December 1997
Order Number: 290245-009
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