TN28F010-120 datasheet, PDF - EEWORLD Datasheet

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TN28F010-120: Description128K X 8 FLASH 12V PROM, 120 ns, PQCC32; Categorystorage storage; File Size881KB，33 Pages; ManufacturerIntel; Websitehttp://www.intel.com/

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TN28F010-120 Overview

128K X 8 FLASH 12V PROM, 120 ns, PQCC32

TN28F010-120 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Intel
Parts packaging code	QFJ
package instruction	0.450 X 0.550 INCH, PLASTIC, LCC-32
Contacts	32
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	120 ns
command user interface	YES
Data polling	NO
Durability	10000 Write/Erase Cycles
JESD-30 code	R-PQCC-J32
JESD-609 code	e0
length	13.97 mm
memory density	1048576 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	12 V
Certification status	Not Qualified
Maximum seat height	3.55 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
type	NOR TYPE
width	11.43 mm

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28F010 1024K (128K X 8) CMOS

FLASH MEMORY

Command Register Architecture for

Microprocessor/Microcontroller

Compatible Write Interface

Noise Immunity Features



±10% V

Tolerance



Maximum Latch-Up Immunity

through EPI Processing

ETOX™ Nonvolatile Flash Technology



EPROM-Compatible Process Base



High-Volume Manufacturing

Experience

JEDEC-Standard Pinouts



32-Pin Plastic Dip



32-Lead PLCC



32-Lead TSOP

(See Packaging Spec., Order #231369)

Flash Electrical Chip-Erase



1 Second Typical Chip-Erase

Quick-Pulse Programming Algorithm



10 µs Typical Byte-Program



2 Second Chip-Program

100,000 Erase/Program Cycles

12.0 V ±5% V

High-Performance Read



90 ns Maximum Access Time

CMOS Low Power Consumption



10 mA Typical Active Current



50 µA Typical Standby Current



0 Watts Data Retention Power

Integrated Program/Erase Stop Timer

Extended Temperature Options

Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write

random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar

EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-

board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases

memory flexibility, while contributing to time and cost savings.

The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of eight bits. Intel’s 28F010 is

offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC

standards for byte-wide EPROMs.

Extended erase and program cycling capability is designed into Intel's ETOX™ (EPROM Tunnel Oxide)

process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field

combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V V

supply, the

28F010 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse

programming and quick-erase algorithms.

Intel's 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds,

low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance

for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates into

power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved

through Intel's unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on

address and data pins, from –1 V to V

+ 1 V.

With Intel's ETOX process technology base, the 28F010 builds on years of EPROM experience to yield the

highest levels of quality, reliability, and cost-effectiveness.

December 1997

Order Number: 290207-012

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