PD - 96323
AUTOMOTIVE MOSFET
AUIRFR2607Z
HEXFET
®
Power MOSFET
D
Features
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V
(BR)DSS
75V
17.6mΩ
22mΩ
45A
k
42A
R
DS(on)
typ.
G
S
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
Description
Specifically designed for Automotive applications, this
HEXFET
®
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
D-Pak
AUIRFR2607Z
G
D
S
G
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
45
32
42
180
110
0.72
± 20
96
96
See Fig.12a, 12b, 15, 16
-55 to + 175
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
k
A
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS
Single Pulse Avalanche Energy (Thermally limited)
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
θJC
Junction-to-Case
R
θJA
Junction-to-Ambient (PCB mount)
R
θJA
Junction-to-Ambient
Ã
h
d
W
W/°C
V
mJ
A
mJ
g
y
y
j
i
Typ.
–––
–––
–––
Max.
1.38
50
110
Units
°C/W
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
08/24/10
AUIRFR2607Z
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
75
–––
–––
2.0
36
–––
–––
–––
–––
–––
0.074
17.6
–––
–––
–––
–––
–––
–––
–––
–––
22
4.0
–––
20
250
200
-200
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 30A
V V
DS
= V
GS
, I
D
= 50µA
S V
DS
= 25V, I
D
= 30A
V
DS
= 75V, V
GS
= 0V
µA
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
nA
V
GS
= -20V
e
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
34
8.9
14
14
59
39
28
4.5
7.5
1440
190
110
720
130
230
51
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
nC
I
D
= 30A
V
DS
= 60V
V
GS
= 10V
V
DD
= 38V
I
D
= 30A
R
G
= 15
Ω
V
GS
= 10V
Conditions
e
e
ns
pF
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 60V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
f
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
30
28
45
k
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 30A, V
DD
= 38V
di/dt = 100A/µs
A
Ã
180
1.3
45
42
V
ns
nC
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
e
Notes
through
are on page 3
2
www.irf.com
AUIRFR2607Z
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments:
This part number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
D PAK
MSL1
Class M4(425V)
(per AEC-Q101-002)
Class H1B(1000V)
(per AEC-Q101-001)
Class C5(1125V)
(per AEC-Q101-005)
Yes
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device
Model
RoHS Compliant
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.21mH
R
G
= 25Ω, I
AS
= 30A, V
GS
=10V. Part not
recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the
same charging time as C
oss
while V
DS
is rising
from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
R
θ
is measured at T
J
approximately 90°C
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 42A
www.irf.com
3
AUIRFR2607Z
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
100
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
10
4.5V
1
4.5V
≤
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
60
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
(Α)
50
40
30
20
10
0
0
10
20
TJ = 25°C
100.0
TJ = 175°C
10.0
TJ = 175°C
1.0
TJ = 25°C
VDS = 20V
≤
60µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VDS = 10V
380µs PULSE WIDTH
30
40
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
4
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AUIRFR2607Z
2400
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1600
20
VGS, Gate-to-Source Voltage (V)
ID= 30A
VDS = 60V
VDS= 30V
VDS= 12V
2000
16
C, Capacitance (pF)
Ciss
12
1200
8
800
4
FOR TEST CIRCUIT
SEE FIGURE 13
400
Coss
Crss
0
1
10
100
0
0
10
20
30
40
50
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD, Reverse Drain Current (A)
100.0
100
100µsec
10
TJ = 175°C
10.0
1.0
TJ = 25°C
VGS = 0V
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
10msec
1msec
DC
1000
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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