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MUR860

Description
RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size178KB,4 Pages
ManufacturerSIRECT
Websitehttp://www.sirectsemi.com/
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MUR860 Overview

RECTIFIER DIODE

MUR860 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeRECTIFIER DIODE
E
L
E
C
T
R
O
N
I
C
MUR860
Ultrafast Rectifier - 8Amp 600Volt
Features
-Epoxy Meets UL 94V-0
-Higjt Voltage Capability
-Low Leakage Current
-High Temperature Glass Passivated Junction
-Pb-Free Packages is Available
Mechanical Characteristics
-Case: Epoxy, Molded
-Weight: 1.9 grames(Approximately)
-Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
-Lead Temperature for Soldering Purposes: 260
ºC
Max for 10 Seconds
Maximum ratings
Rating
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Total Device(Rated V
R
), T
C
= 150
ºC
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20kH
Z
), T
C
= 150
ºC
Nonrepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60H
Z
)
Operating Junction Temperature and Storage Temperature Range
Symbol
Value
600
8
Unit
V
A
V
RRM
I
F(AV)
I
FM
I
FSM
T
J
,
T
stg
16
A
100
-65 to +175
A
ºC
Electrical characteristics
Rating
Maximum Instantaneous Forward Voltage (Note 1)
IF = 8.0A, TC = 150
ºC
IF = 8.0A, TC = 25
ºC
Maximum Instantaneous Reverse Current (Note 1)
Rated DC Voltage, T
J
= 150
ºC
Rated DC Voltage, T
J
= 25
ºC
Maximum Reverse Recovery Time
I
F
= 1.0A, di/dt = 50A/μs
I
F
= 0.5A, I
R
= 1.0A, I
REC
= 0.25A
Maximum Thermal Resistance, Junction-to-Case
Note: 1.Pulse Test : Pulse Width = 300μs, Duty Cycle
Symbol
Value
Unit
V
F
1.2
1.5
500
10
60
50
2.0
V
I
R
μA
t
rr
R
θJC
ns
ºC/W
2.0%
August 2007 / Rev.5
http:// www.sirectsemi.com
1

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