TN1215, TYN612, TYN812,
TYN1012
Standard 12 A SCRs
Datasheet
-
production data
Features
On-state RMS current, I
T(RMS)
12 A
Repetitive peak off-state voltage, V
DRM
and
V
RRM
600 V, 800 V and 1000 V
Triggering gate current, I
GT
5 mA or 15 mA
Description
The standard 12 A SCR series is suitable to fit all
modes of control, found in applications such as
overvoltage crowbar protection, motor control
circuits in power tools and kitchen aids, inrush
current limiting circuits, capacitive discharge
ignition and voltage regulation circuits.
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space.
Table 1. Device summary
Voltage V
DRM
/ V
RRM
(v)
Order code
600
TYN1012RG
TYN1012TRG
TYN612RG
TYN612TRG
TYN812RG
TYN812TRG
TN1215-600B
TN1215-600B-TR
TN1215-600G
TN1215-600G-TR
TN1215-600H
TN1215-800B-TR
TN1215-800G-TR
TN1215-800H
October 2016
This is information on a product in full production.
I
GT (mA)
800
1000
x
x
x
x
x
x
x
x
x
x
x
x
x
x
DocID7475 Rev 11
15
5
15
5
15
5
15
15
15
15
15
15
15
15
Package
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
DPAK
DPAK
D
2
PAK
D
2
PAK
IPAK
DPAK
D
2
PAK
IPAK
1/17
www.st.com
Characteristics
TN1215, TYN612, TYN812, TYN1012
1
Characteristics
Table 2. Absolute ratings (limiting values)
Value
Symbol
Parameter
TN1215-x00B
TN1215-x00H
(1) (2)
TN1215-
x00G
(1)(2)
TYNx12
(2)(3)
TYNx12T
(2)(3)
Unit
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
V
RGM
On-state RMS current
(180° conduction angle)
Average on-state current
(180° conduction angle)
TO-220AB ins.
D
2
PAK
T
c
= 110 °C
DPAK
IPAK
T
jinitial
= 25 °C
T
jinitial
= 25 °C
F = 60 Hz
t
p
= 20 µs
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
115
110
60
12
A
8
145
140
98
50
4
1
- 40 to + 150
- 40 to + 125
5
A
A
2
S
A/µs
A
W
°C
V
Non repetitive surge peak t
p
= 8.3 ms
on-state current
t
p
= 10 ms
I
2
t value for fusing
Critical rate of rise of on-
state current
I
G
= 2 x I
GT
, t
r
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
1. x00= 600, 800
2. Check
Table 1
for devices availability
3. x= 6,8,10
2/17
DocID7475 Rev 11
TN1215, TYN612, TYN812, TYN1012
Characteristics
Table 3. Standard electrical characteristics (T
j
= 25 °C, unless otherwise specified)
TN1215-x00
(1)(2)
Symbol
Test conditions
-B/-H
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
V
to
R
d
I
DRM
I
RRM
V
D
= V
DRM,
R
L
= 3.3 k
I
T
= 500 mA, gate open
I
G
= 1.2 I
GT
V
D
= 67% V
DRM,
gate open
I
TM
= 24 A
t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
D
= V
R
= V
DRM
= V
RRM
T
j
=125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
Min.
V
D
= 12 V, R
L
= 33
Max.
Max.
Min.
Max.
Max.
Min.
Max.
Max.
Max.
Max.
40
80
200
1.6
0.85
30
5
2
30
60
2
15
1.3
0.2
15
30
40
30
60
200
-G
x12T
TYN
(2)
(3)
x12
2
(3)
Unit
0.5
5
15
mA
V
V
mA
mA
V/µs
V
V
m
µA
mA
1. x00= 600, 800
2. Check
Table 1
for devices availability
3. x= 6,8,10
Table 4. Thermal resistance
Symbol
R
th(j-c)
Junction to case (DC)
Parameter
D
2
PAK, DPAK, IPAK, TO-220AB
S
(1)
= 0.5 cm
2
DPAK
R
th(j-a)
Junction to ambient (DC)
S
(1)
= 1.0 cm
2
D²PAK
IPAK
TO-220AB
1. S = Copper surface under tab
Value
1.3
70
45
100
60
Unit
°C/W
°C/W
DocID7475 Rev 11
3/17
17
Characteristics
TN1215, TYN612, TYN812, TYN1012
Figure 1. Maximum average power dissipation
versus average on-state current
Figure 2. Average and DC on-state current
versus case temperature
Figure 3. Average and DC on-state current
versus ambient temperature (DPAK, D
2
PAK)
Figure 4. Relative variation of thermal
impedance junction to case versus pulse
duration
K=[Z
th(j-c)
/R
th(j-c)
]
1.0
0.5
0.2
t
p
(s)
0.1
1E-3
1E-2
1E-1
1E+0
Figure 5. Relative variation of thermal
impedance junction to ambient versus pulse
duration
K=[Z
th(j-a)
/R
th(j-a)
]
1.00
Device mounted on FR4 with
recommended pad layout
DPAK
Figure 6. Relative variation of gate trigger,
latching and holding current versus junction
temperature
D
2
PAK
0.10
TO-220AB / IPAK
t
p
(s)
0.01
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
4/17
DocID7475 Rev 11
TN1215, TYN612, TYN812, TYN1012
Characteristics
Figure 7. Surge peak on-state current versus
number of cycles
Figure 8. Non repetitive surge peak on-state
current for a sinusoidal pulse with width
tp<10 ms
Figure 9. On-state characteristics (maximum
values)
I
TM
(A)
200
100
T
j
max.:
V
t0
=0.85V
R
d
=30m
Ω
Figure 10. Thermal resistance junction to
ambient versus copper surface under tab
(DPAK and D²PAK)
R
th(j-a)
(°C/W)
100
Epoxy printed circuit board FR4
copper thickness = 35 µm
80
60
T
j
=max
DPAK
10
T
j
=25°C
40
D
2
PAK
20
V
TM
(V)
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0
2
4
6
8
S(cm²)
10
12
14
16
18
20
DocID7475 Rev 11
5/17
17
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