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2SC4672-TP

Description
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, ULTRA SMALL, PLASTIC, PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size211KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric View All

2SC4672-TP Overview

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, ULTRA SMALL, PLASTIC, PACKAGE-3

2SC4672-TP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)82
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)210 MHz
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SC4672-P
2SC4672-Q
Features
Ideally Suited For Automatic Instertion
Untral Small Surface Mount Package
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
(unless otherwise noted)
NPN
Plastic-Encapsulate
Transistors























Maximum Ratings @ T
a
= 25
Symbol
I
C
P
D
T
J
T
STG
Parameter
Collector Current
Total Device Dissipation
Junction Temperature
Storage Temperature Range
O
Value
2
0.5
150
-55 to +150
Unit
A
W
SOT-89
Electrical Characteristics @ 25 C Unless Otherwise Specified
Symbol
OFF CHARACTERISTICS
V(
BR
)CEO
V(
BR
)CBO
V(
BR
)EBO
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=1mAdc,I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=50uAdc,I
E
=0)
Collector-Base Breakdown Voltage
(I
E
=50uAdc,I
C
=0)
Collector-Base Cutoff Current
(V
CB
=60Vdc, I
E
=0)
Emitter-Base Cutoff Current
(V
EB
=5Vdc, I
C
=0)
DC Current Gain
(I
C
=0.5Adc, V
CE
=2Vdc)
Collector-Emitter Saturation Voltage
(I
C
=1Adc, I
B
=50mAdc)
Transition Frequency
(V
CE
=2Vdc,I
C
=500mAdc,f=100MHZ)
Collector Output Capacitance
(V
CB
=10Vdc,I
E
=0,f=1MHZ)
Min
50
60
6
Max
Units
V
V
V
I
CBO
I
EBO
0.1
0.1
µAdc
uAdc
ON CHARACTERISTICS
h
FE
V
CE(sat)
82
270
0.35
210(typ)
25(typ)
Vdc
MHZ
PF




















A
B
K
E
C
D
G
H
J
F
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER
f
T
Cob
Rank
Range
CLASSIFICATION OF
h
FE

P
82-180
DKP
Q
120-270
DKQ
Marking











 


 

 




1.55

.061




25

































REF.








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Revision:
A
1 of 2
2011/01/01

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