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JANS1N6519US

Description
Rectifier Diode, 1 Element, 0.5A, 10000V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size1MB,4 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

JANS1N6519US Overview

Rectifier Diode, 1 Element, 0.5A, 10000V V(RRM), Silicon,

JANS1N6519US Parametric

Parameter NameAttribute value
MakerSSDI
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current0.5 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
GuidelineMIL-19500
Maximum repetitive peak reverse voltage10000 V
Maximum reverse recovery time0.07 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
On May 22, 2013, DLA Land and Maritime ac-
cepted SSDI’s qualification data for the JANS1N6512
- JANS1N6519 series of high voltage power rectifiers
(MIL-PRF-19500/575). JAN, JANTX, JANTXV,
and JANS versions are currently available direct from
the factory. Contact SSDI today for more informa-
tion and to request samples. SSDI looks forward to
continuing its work with DLA Land and Maritime
to qualify more of its current product offerings for
JANS certification, the highest quality level assigned
by MIL-PRF-19500.
Axial
Leaded
Surface
Mount
JAN / JANTX / JANTXV / JANS1N6512 - 1N6519
Maximum Ratings / Electrical Characteristics
Part
Number
1N6513, US
1N6512, US
V
RWM
(V)
t
p
=8.3 ms
(A)
I
FSM
100
60
(A)
I
O
t
RR
(ns)
T
STG
(°C)
(°C)
T
J
L=.25", Air
(°C/W)
R
θJL1
16
1N6519, US
1N6518, US
1N6517, US
1N6516, US
1N6515, US
1N6514, US
10,000
7,500
5,000
4,000
3,000
2,500
2,000
1,500
100
60
25
25
40
40
0.75
0.5
0.5
0.75
1.0
1.0
1.5
1.5
70
70
70
70
70
70
70
70
-65 to +200
-65 to +200
-65 to +200
-65 to +200
-65 to +200
-65 to +200
-65 to +200
-65 to +200
-65 to +175
-65 to +175
-65 to +175
-65 to +175
-65 to +175
-65 to +175
-65 to +175
-65 to +175
L=.25",
Oil Bath
(°C/W)
R
θJL2
(°C/W)
R
θJEC
4
T
A
=+25°C
(µA)
I
R
@I
O
(V)
V
F
3.5
V
R
= 50V
F
O
= 1kHz
(pF)
C
16
16
16
16
16
16
16
12
12
12
12
12
12
5
5
5
4
4
4
12
12
5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
8.0
8.0
6.0
6.0
3.5
20
16
8
8
16
20
25
25
13.0
13.0
High Reverse Voltage: 1,500 - 10,000 Volts
Void Free Ceramic Frit Construction
Solid Silver Leads
Ultra fast recovery
JAN, JANTX, JANTXV, & JANS screening available
FEATURES
ƒ
For use in high voltage systems including TWT radar applications
ƒ
Excellent cryogenic performance in liquid-to-liquid shock tests
ƒ
High thermal conductivity
ƒ
High switching efficiency; Lower switching losses
ƒ
Hyper fast recovery versions available - contact factory
ƒ
Screened to MIL-PRF-19500
BENEFITS / ADVANTAGES
Solid State Devices, Inc. | ISO 9001: 2008 & AS9100:2009 Rev. C | (562) 404-4474 | www.ssdi-power.com
Contact SSDI for more information and to request samples

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