Z01
Standard 1A Triacs
Features
■
■
■
A2
On-state rms current, I
T(RMS)
1 A
Repetitive peak off-state voltage, V
DRM
/V
RRM
600 or 800 V
Triggering gate current, I
GT (Q1)
3 to 25 mA
G
A1
A2
G
A2
A1
TO-92
Z01xxA
G
A1
SOT-223
Z01xxN
A2
Description
The Z01 series is suitable for general purpose AC
switching applications. These devices are
typically used in applications such as home
appliances (electrovalve, pump, door lock, small
lamp control), fan speed controllers,...
Different gate current sensitivities are available,
allowing optimized performance when driven
directly through microcontrollers.
October 2010
Doc ID 7474 Rev 9
1/11
www.st.com
11
Characteristics
Z01
1
Characteristics
Table 1.
Symbol
I
T(RMS)
On-state rms current
(full sine wave)
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25 °C)
I
²
t Value for fusing
Absolute maximum ratings
Parameter
SOT-223
TO-92
F = 50 Hz
F = 60 Hz
t
p
= 10 ms
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
tab
= 90 °C
T
L
= 50 °C
t = 20 ms
t = 16.7 ms
8
A
8.5
0.35
20
1
1
- 40 to + 150
- 40 to + 125
A
²
s
A/µs
A
W
°C
Value
1
Unit
A
I
TSM
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
Critical rate of rise of on-state current
F = 120 Hz
I
G
= 2 x I
GT
, t
r
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
t
p
= 20 µs
Table 2.
Symbol
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Z01
Test conditions
Quadrant
03
07
5
7
1.3
0.2
7
7
MAX.
II
MIN.
MIN.
15
10
0.5
20
20
1
25
50
2
50
100
5
V/µs
V/µs
10
10
10
15
25
25
mA
09
10
10
10
25
mA
5
MAX.
MIN.
MAX.
I - III - IV
25
V
V
mA
I - II - III
V
D
= 12 V,
R
L
= 30
Ω
V
D
= V
DRM
,
R
L
= 3.3 kΩ,
T
j
= 125 °C
I
T
= 50 mA
I
G
= 1.2 I
GT
MAX.
IV
ALL
ALL
3
Unit
I
GT (1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt
(2)
V
D
= 67% V
DRM
gate open
T
j
= 110 °C
(dV/dt)
c
(dI/dt)
c
= 0.44 A/ms,
(2)
T
j
= 110 °C
1. Minimum I
GT
is guaranteed at 5% of I
GT
max.
2. For both polarities of A2 referenced to A1.
2/11
Doc ID 7474 Rev 9
Z01
Table 3.
Symbol
V
TM(1)
V
to (1)
R
d (1)
I
DRM
I
RRM
I
TM
= 1.4 A, t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
Characteristics
Static characteristics
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
MAX.
MAX.
MAX.
MAX.
0.5
mA
Value
1.6
0.95
400
5
Unit
V
V
mΩ
µA
1. For both polarities of A2 referenced to A1.
Table 4.
Symbol
R
th(j-t)
R
th(j-I)
R
th(j-a)
Thermal resistances
Parameter
Junction to tab (AC)
Junction to lead (AC)
S
(1)
= 5 cm
²
Junction to ambient
TO-92
150
SOT-223
TO-92
SOT-223
Value
25
60
60
Unit
°C/W
°C/W
°C/W
1. S = copper surface under tab.
Figure 1.
Maximum power dissipation
versus on-state rms current
(full cycle)
Figure 2.
On-state rms current versus lead
(TO-92) or tab (SOT-223)
temperature (full cycle)
P(W)
1.50
1.25
1.00
0.75
0.50
0.25
I
T(RMS)
(A)
1.2
R
th(j-a)
= R
th(j-t)
(SOT-223)
1.0
0.8
R
th(j-a)
= R
th(j-l)
(TO-92)
0.6
0.4
0.2
I
T(RMS)
(A)
0.00
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
T
l
or T
tab
(°C)
0.0
0
25
50
75
100
125
Doc ID 7474 Rev 9
3/11
Characteristics
Z01
Figure 3.
On-state rms current versus
ambient temperature (full cycle)
Figure 4.
Relative variation of thermal
impedance versus pulse duration
I
T(RMS)
(A)
1.2
1.0
0.8
0.6
0.4
0.2
R
th(j-a)
= 150°C/W
(TO-92)
K=[Z
th(j-a)
/R
th(j-a)]
1.00
R
th(j-a)
= 60°C/W
(SOT-223)
Z01xxA
0.10
Z01xxN
T
amb
(°C)
0.0
0
25
50
75
100
125
0.01
1E-3
1E-2
1E-1
t
p
(s)
1E+0
1E+1
1E+2
5E+2
Figure 5.
Relative variation of holding
Figure 6.
current and latching current versus
junction temperature (typ. values)
I
TSM
(A)
9
8
Surge peak on-state current versus
number of cycles
I
GT
, I
H
, I
L
[T
j
] / I
GT
, I
H
, I
L
[T
j
=25°C]
2.5
t=20ms
2.0
7
6
Non repetitive
T
j
initial = 25°C
One cycle
1.5
I
GT
5
4
Repetitive
T
amb
= 25°C
1.0
I
H
& I
L
3
2
1
0.5
0.0
-40
-20
0
20
T
j
(°C)
40
60
80
100
120
140
0
1
Number of cycles
10
100
1000
Figure 7.
Non-repetitive surge peak
Figure 8.
on-state current and corresponding
value of I
2
t sinusoidal pulse width
I
TM
(A)
10.0
T
j
initial = 25°C
dI/dt limitation:
20A/µs
I
TSM
On-state characteristics
(maximum values)
I
TSM
(A), I
2
t (A
2
s)
100.0
10.0
width t
p
<10 ms and corresponding value of I t
2
T
j
= T
j
max.
1.0
1.0
I
2
t
T
j
= 25°C
T
j
=max.
V
t0
=0.95 V
R
d
=400 m
Ω
0.1
0.01
t
p
(ms)
0.10
1.00
10.00
0.1
0.0
0.5
1.0
1.5
2.0
V
TM
(V)
2.5
3.0
3.5
4.0
4.5
5.0
4/11
Doc ID 7474 Rev 9
Z01
Characteristics
Figure 9.
Relative variation of critical rate
Figure 10. Relative variation of critical rate of
of decrease of main current versus
decrease of main current versus
(dV/dt)c (typical valuues)
junction temperature
(dI/dt)c [T
j
] / (dI/dt)c [T
j
Specified]
6
5
4
3
2
Z0103
Z0107
Z0109
Z0110
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1
(dV/dt)c (V/µs)
0
1.0
10.0
100.0
T
j
(°C)
0
25
50
75
100
125
Figure 11. SOT-223 thermal resistance junction to ambient versus copper surface under case
(printed circuit board FR4, copper thickness; 35 µm)
R
th(j-a)
(°C/W)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0
0.5
1.0
1.5
2.0
S(cm²)
2.5
3.0
3.5
4.0
4.5
5.0
Doc ID 7474 Rev 9
5/11
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