1N4740A thru 1M200Z
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low profile package
- Built-in strain relief
- Low inductance
- Typical IR less than 5μA above 11V
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Junction Silicon Zener Diodes
- Glass passivated chip junction
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight:
0.3g (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=50℃,
Derate above 50℃ (Note 1)
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load
Operating junction temperature range
Storage temperature range
Note 1: Mounted on Cu-Pad size 5mm x 5mm x 1.6mm on PCB
SYMBOL
P
D
I
FSM
T
J
T
STG
VALUE
1.0
6.67
10
- 55 to +150
- 55 to +150
UNIT
Watts
mW/
℃
A
O
O
C
C
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
1N47xxA
1MxxxZ
(Note 1)
A0
Prefix "H"
R0
R1
B0
Suffix "G"
PACKING CODE
GREEN COMPOUND
CODE
DO-41
DO-41
DO-41
DO-41
3000 / Ammo box (26mm taping)
5000 / 13" Paper reel
5000 / 13" Paper reel (Reverse)
1000 / Bulk packing
PACKAGE
PACKING
Note 1: "xx" defines voltage from 10V (1N4740A) to 200V (1M200Z)
EXAMPLE
PREFERRED P/N
1N4740A A0
1N4740A A0G
1N4740AHA0
PART NO.
1N4740A
1N4740A
1N4740A
H
AEC-Q101
QUALIFIED
PACKING CODE
A0
A0
A0
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
Document Number: DS_D1405012
Version: H14
1N4740A thru 1M200Z
Taiwan Semiconductor
CREAT BY ART
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
Zener Voltage
Device
(Note 1)
Min.
1N4740A
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
1N4748A
1N4749A
1N4750A
1N4751A
1N4752A
1N4753A
1N4754A
1N4755A
1N4756A
1N4757A
1N4758A
1N4759A
1N4760A
1N4761A
1N4762A
1N4763A
1N4764A
1M110Z
1M120Z
1M130Z
1M150Z
1M160Z
1M180Z
1M200Z
Notes:
1. Tolerance and Type Number Designation. The type numbers losted have a standard tolerance on the nominal zener voltage of ±5%
2. Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances
B. Matched sets
3. Zener Voltage (Vz) Measurement. Guarantees the zener voltage when messured at 90 seconds while maintaining the lead
temperature(TL) at 30℃±1℃, from the diode body
4. Zener Impedance (Zz) Derivation. The zener impedance is derives from the 60 cycle AC voltage, which results when an accurrent
having and rms value equal to 10% of the DC zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
5. Surge Current (I
R
) Non-Repetitive. The rating listd in the electrical chatacteristics table is maximum peak, non-repetitive, reverse
surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, I
ZT
per
JEDEC registration; however, actual device capability is as described in Figure 11
Document Number: DS_D1405012
Version: H14
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
58.90
64.60
71.25
77.90
86.45
95.00
104.50
114.00
123.50
142.50
152.00
171.00
190.00
Vz@Iz
T
V
Nom.
(Note 2)
(Note 3)
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
Max.
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
65.10
71.40
78.75
86.10
95.55
105.00
115.50
126.00
136.50
157.50
168.00
189.00
210.00
25.0
23.0
21.0
19.0
17.0
15.5
14.0
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
2.3
2.0
1.9
1.7
1.6
1.4
1.2
7
8
9
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
200
250
350
450
550
700
1000
1100
1200
1500
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
4000
4500
5000
6000
6500
7000
8000
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Test
Current
I
ZT
mA
Z
ZT
@I
ZT
Ω
Ω
Zener Impedance
Z
ZK
@I
ZK
mA
uA
Max.
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0
454
414
380
344
304
285
250
225
205
190
170
150
135
125
115
110
95
90
80
70
65
60
55
50
45
-
-
-
-
-
-
-
Leakage Current
I
R
@V
R
V
Surge current
T
A
=25℃
I
R
mA
1N4740A thru 1M200Z
Taiwan Semiconductor
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG. 1 POWER TEMPERATURE DERATING CURVE
1.25
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
1000
MINIMUM
MAXIMUM
P
D
, MAXIMUM POWER DISSIPATION
(WATTS)
1
IF, FORWARD CURRENT (mA)
0.75
100
70℃
0.5
10
150℃
25℃
0.25
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE(℃)
0℃
1
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
F
, FORWARD VOLTAGE (V)
1000
FIG.3 EFFECT OF ZENER CURRENT
ON ZENER IMPEDANCE
Iz(rms)=0.1 Iz(dc)
f=1KHz
FIG.5 TYPICAL LEAKAGE CURRENT
10000
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
Zz, DYNAMIC IMPEDANCE (Ω)
100
47V
1000
27V
10
100
0.8V
1
0
1
10
100
IR, LEAKAGE CURRENT(μA)
10
Iz, ZENER CURRENT (mA)
FIG.4 EFFECT OF ZENER VOLTAGE
ON ZENER IMPEDANCE
1
1000
Iz = 1mA
Zz, DYNAMIC IMPEDANCE (Ω)
TA=25℃
Iz(rms)=0.1 Iz(dc)
f=1KHz
0.1
125℃
100
5 mA
20mA
0.01
10
25℃
0.001
1
1
10
100
3
4
5
6
7
8
9
10
11
12
13
14
15
Vz, NOMINAL ZENER VOLTAGE(V)
Iz, ZENER CURRENT(mA)
Document Number: DS_D1405012
Version: H14
1N4740A thru 1M200Z
Taiwan Semiconductor
CREAT BY ART
FIG. 7 TEMPERATURE COEFFICIENTS
12
10
θVz,
TEMPERATURE COEFFICIENT
(mV/℃)
C, CAPACITANCE(pF)
8
6
4
2
0
-2
-4
2
3
4
5
6
7
8
9
10
11
12
Vz, ZENER VOLTAGE(V)
RANGE Vz@ IZT
a-RANGE FOR UNITS TO 12 VOLTS
FIG.6 TYPICAL CAPACITANCE versus Vz
1000
0V BIAS
100
1.0V BIAS
50% OF BREAKDOWN
10
1
10
Vz, FORWARD VOLTAGE (V)
100
FIG.8 TEMPERATURE COEFFICIENTS
100
θVz,
TEMPERATURE COEFFICIENT
(mV/℃)
b-RANGE FOR UNITS 12 TO 100 VOLTS
θVz,
TEMPERATURE COEFFICIENT
(mV/℃)
4
6
Vz@ IZT
FIG. 9 EFFECT OF ZENER CURRENT
0.01mA
1 mA
2
20mA
0
10
RANGE Vz@ IZT
-2
1
10
Vz, ZENER VOLTAGE(V)
100
-4
3
3.5
4
NOTE:BELOW 3 VOLTAGE ABOVE a
VOLTS CHANGES IN ZENER CURRENT
NOT AFFECT TEMPERATURE COEFFICIENTS
4.5
5
5.5
6
6.5
7
7.5
8
Vz, ZENER VOLTAGE(V)
FIG. 10 TYPICAL THERMAL RESISTANCE
versus LEAD LENGTH
175
ΘJL,
JUNCTION TO LEAD THERMAL
RESISTANCE(℃/W)
150
125
100
75
50
25
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
L, LEAD LENGTH TO HEAT SINK(INCHES)
Document Number: DS_D1405012
Version: H14
1N4740A thru 1M200Z
Taiwan Semiconductor
CREAT BY ART
FIG.11 MAXIMUM SURGE POWER
100
P
PK
, PEAK SURGE POWER WATTS
5% DUTY CYCLE
11V-91V NON-REPETITIVE
RECTANGULAR WAVEFORM
TA=25℃ PRIOR TO INITIAL PULSE
0.8V-10V NON-REPETITIVE
10
10% DUTY CYCLE
20% DUTY CYCLE
1
0
0
1
10
PW, PULSE WIDTH (ms)
100
1000
Document Number: DS_D1405012
Version: H14
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