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1T2GHA0G

Description
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size168KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

1T2GHA0G Overview

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon,

1T2GHA0G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage100 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
1T1G - 1T7G
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V Glass Passivated Rectifiers
FEATURES
- Low forward voltage drop
- High current capability
- High reliability
- High surge current capability
- 3mm miniature body
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
TS-1
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Weight:
0.2g (approximately)
TS-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1.0 MHz and Applied V
R
=4.0 Volts
T
J
=25 °C
T
J
=125 °C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
R
θJA
T
J
T
STG
1.1
5
100
10
100
- 55 to +150
- 55 to +150
1T1G 1T2G 1T3G 1T4G 1T5G 1T6G 1T7G
50
35
50
100
70
100
200
140
200
400
280
400
1
30
1.0
600
420
600
800
560
800
1000
700
1000
UNIT
V
V
V
A
A
V
μA
pF
°C/W
°C
°C
Document Number: DS_D1410024
Version: G15
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