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1T6GB0

Description
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size226KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

1T6GB0 Overview

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon,

1T6GB0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
CREAT BY ART
1.0 AMP. Glass Passivated Rectifiers
TS-1
Features
Low forward voltage drop
High current capability
High reliability
High surge current capability
3mm miniature body
Green compound with suffix "G" on packing
code & prefix "G" on datecode
1T1G - 1T7G
Mechanical Data
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Axial leads, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed: 260℃/10s
Weight: 0.20 grams
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@1A
Maximum Reverse Current @ Rated VR T
A
=25
T
A
=125℃
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note1: Pulse Test with PW=300 usec, 1% Duty Cycle
Symbol 1T1G 1T2G 1T3G
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
R
θjA
T
J
T
STG
1.1
50
35
50
100
70
100
200
140
200
1T4G
400
280
400
1
30
1T5G
600
420
600
1T6G
800
560
800
1T7G
1000
700
1000
Unit
V
V
V
A
A
1.0
5
100
10
100
- 55 to + 150
- 55 to + 150
O
V
uA
pF
C/W
O
O
C
C
Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:D13
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