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800B120KT500XTV

Description
Ceramic Capacitor, Ceramic, 500V, 10% +Tol, 10% -Tol, C0G, 30ppm/Cel TC, 0.000012uF, Surface Mount, 1111, CHIP, ROHS COMPLIANT
CategoryPassive components    capacitor   
File Size218KB,5 Pages
ManufacturerATC [American Technical Ceramics]
Environmental Compliance  
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800B120KT500XTV Overview

Ceramic Capacitor, Ceramic, 500V, 10% +Tol, 10% -Tol, C0G, 30ppm/Cel TC, 0.000012uF, Surface Mount, 1111, CHIP, ROHS COMPLIANT

800B120KT500XTV Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerATC [American Technical Ceramics]
package instruction, 1111
Reach Compliance Codecompliant
ECCN codeEAR99
capacitance0.000012 µF
Capacitor typeCERAMIC CAPACITOR
dielectric materialsCERAMIC
high1.78 mm
JESD-609 codee3
length2.79 mm
Installation featuresSURFACE MOUNT
multi-layerNo
negative tolerance10%
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package shapeRECTANGULAR PACKAGE
Package formSMT
method of packingTR
positive tolerance10%
Rated (DC) voltage (URdc)500 V
size code1111
surface mountYES
Temperature characteristic codeC0G
Temperature Coefficient-/+30ppm/Cel ppm/°C
Terminal surfaceTin (Sn) - with Nickel (Ni) barrier
Terminal shapeWRAPAROUND
width2.79 mm
ATC 800 B Series
NPO Ceramic, High RF Power
Ultra-Low ESR
Multilayer Capacitors
• Case B Size
(.110" x .110")
• Rugged, reliable
NPO dielectric
• Case optimized for
highest self resonant
frequency
• Capacitance Range
0.1 pF to 1000 pF
• Lowest ESR
• Capable of highest
RF Power
• RoHS Compliant / Lead-Free
ATC’s 800 B Series offers superb performance in demanding high RF
power applications requiring consistent and reliable operation. The
combination of highly conductive metal electrode systems, optimized
case geometries, and proprietary dielectrics, yields the lowest ESR.
ATC’s new NPO low loss rugged dielectrics are designed to provide
superior heat transfer in high RF power applications. Ultra-low ESR
and superior thermal performance insure that the 800 B Series prod-
ucts are your best choice for high RF power applications from VHF
through microwave frequencies.
Typical applications: VHF / UHF / HDTV Broadcast Transmitters, Wire-
less Communications, Public Safety Radio, Avionics, Telecom, WiMAX,
Microwave Communication Systems and Satellite Systems.
Typical circuit applications: High RF Power Filter Networks, Combiners,
Couplers, Matching Networks, Output Coupling, Antenna Coupling, and
DC Blocking and Bypassing.
ELECTRICAL AND MECHANICAL
SPECIFICATIONS
QUALITY FACTOR (Q):
2000 @ 1 MHz
TEMPERATURE COEFFICIENT OF CAPACITANCE (TCC):
0 ±30 PPM/°C (-55°C to +125°C)
INSULATION RESISTANCE (IR):
0.1 pF to 1000 pF:
10
5
Megohms min. @ +25°C at rated WVDC
10
4
Megohms min. @ +125°C at rated WVDC
WORKING VOLTAGE (WVDC):
See Capacitance Values Table, page 2
DIELECTRIC WITHSTANDING VOLTAGE (DWV):
Case B: 250% of rated WVDC for 5 secs
RETRACE:
Less than ±(0.02% or 0.02 pF), whichever is greater
AGING EFFECTS:
None
PIEZOELECTRIC EFFECTS:
None
(No capacitance variation with voltage or pressure)
CAPACITANCE DRIFT:
±(0.02% or 0.02 pF), whichever is greater
OPERATING TEMPERATURE RANGE:
From -55°C to +125°C (No derating of working voltage)
TERMINATION STYLES:
RoHS Compliant and Solder Plate
See Mechanical Configurations, page 3
TERMINAL STRENGTH:
Terminations for chips withstand a pull of
5 lbs. min., 15 lbs. typical, for 5 seconds in direction perpendicular
to the termination surface of the capacitor. Test per MIL-STD-202,
method 211.
ENVIRONMENTAL TESTS
ATC 800 B Series Capacitors are designed and manufactured to meet and
exceed the requirements of EIA-198, MIL-PRF-55681 and MIL-PRF-123.
THERMAL SHOCK:
MIL-STD-202, Method 107, Condition A
MOISTURE RESISTANCE:
MIL-STD-202, Method 106
LOW VOLTAGE HUMIDITY:
MIL-STD-202, Method 103, Condition A, with 1.5 Volts DC applied
while subjected to an environment of 85°C with 85% relative
humidity for 240 hours min.
LIFE TEST:
MIL-STD-202, Method 108, for 2000 hours, at 125°C
200% WVDC applied
ISO 9001
REGISTERED
COMPANY
ATC # 001-1033 Rev. I, 6/13
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