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YTS4125TE85L

Description
TRANSISTOR 200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size46KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

YTS4125TE85L Overview

TRANSISTOR 200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal

YTS4125TE85L Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-based maximum capacity4.5 pF
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.4 V

YTS4125TE85L Related Products

YTS4125TE85L YTS4125TE85R
Description TRANSISTOR 200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal TRANSISTOR 200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal
Maker Toshiba Semiconductor Toshiba Semiconductor
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A
Collector-based maximum capacity 4.5 pF 4.5 pF
Collector-emitter maximum voltage 30 V 30 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 25 25
JEDEC-95 code TO-236 TO-236
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz
VCEsat-Max 0.4 V 0.4 V
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